Taiwan Semiconductor Manufacturing Comp. Ltd.

Taiwan Semiconducor Manufacturing Company, Ltd.

Chia-Chien Kuang

Tze-Chung Lin

Huan-Chieh Su

Li-Te S Lin

Fang-Wei Lee

Wei-Lun Chen

Meng-Huan Jao

The present disclosure describes a semiconductor device with substantially uniform gate regions and a method for forming the same. The method includes forming a fin structure on a substrate, the fin structure including one or more nanostructures. The method further includes removing a portion of the fin structure to expose an end of the one or more nanostructures and etching the end of the one or more nanostructures with one or more etching cycles. Each etching cycle includes purging the fin structure with hydrogen fluoride (HF), etching the end of the one or more nanostructures with a gas mixture of fluorine (F) and HF, and removing an exhaust gas mixture including an etching byproduct. The method further includes forming an inner spacer in the etched end of the one or more nanostructures.

Method for fabricating a semiconductor device including etching nanostructures

A method for manufacturing a semiconductor device includes:

Method for manufacturing semiconductor device using etchant composition having high etching selectivity

A method for manufacturing a semiconductor device includes: forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure; and laterally trimming the hard mask portion by a lateral etching process. The lateral etching process includes a radical etching process and a chemical etching process. Alternatively, the lateral etching process includes a radical etching process, a plasma etching process, or a combination thereof, and a cleaning process.

Hard mask trimming in method for manufacturing semiconductor device

Growing community of inventors

Hsinchu, Taiwan

Chia-Chien Kuang