National Chung Hsing University

National Yang Ming Chiao Tung University

Estinet Technologies Inc.

Chia-Cheng Wu

Ray-Hua Horng

Dong-Sing Wuu

Shie-Yuan Wang

Po-Rung Lin

Cheng-Ying Yen

The disclosure is related to a method for constructing hybrid network spanning trees, a method of redundancy, and a control system thereof. The method and system are adapted to a hybrid network system including at least one software-defined network (SDN) and at least one non-SDN network. In the method, a controller of the SDN is employed to collect network packets over the hybrid network. After analyzing the information carried in the network packets, the information relating to the topology can be obtained. Therefore, all the possible spanning trees can be constituted according to the topology. As well, the path delay and path bandwidth respectively for the SDN and non-SDN can also be obtained. The information allows the system to render utility function for every spanning tree. The most suitable spanning tree over the hybrid network system is applied. A mechanism of redundancy is also provided.

Method for constituting hybrid network spanning trees, method of redundancy, and control system thereof

A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.

Semiconductor substrate for growth of an epitaxial semiconductor device

A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate.

Method for fabricating semiconductor devices and a semiconductor device made therefrom

Growing community of inventors

Taichung, Taiwan

Chia-Cheng Wu