Epistar Corporation

Chia-Cheng Lui

Ya-Yu Yang

Shang-Ju Tu

A semiconductor device, including: a channel layer formed on a substrate; a top barrier layer formed on the channel layer, wherein a first heterojunction is formed between the channel layer and the top barrier layer so that a first two-dimensional electron gas is generated in the channel layer; a buffer structure formed between the substrate and the channel layer; a back barrier layer formed between the buffer structure and the channel layer, wherein a second heterojunction is formed between the buffer structure and the back barrier layer so that a second two-dimensional electron gas is generated in the buffer structure; and a source electrode, a drain electrode, and a gate electrode formed on the top barrier layer, respectively; wherein a sheet carrier density of the second two-dimensional electron gas is less than 8E+10 cm.

Growing community of inventors

Hsinchu, Taiwan

Chia-Cheng Lui