Epistar Corporation

Industrial Technology Research Institute

Vtera Technology Inc.

Chia-Cheng Liu

Min-Hsun Hsieh

Ming-Jiunn Jou

Chao-Nien Huang

Shu-Wen Sung

Chih-Chiang Lu

Shane-Shyan Wey

Ya-Yu Yang

Shang-Ju Tu

Tsung-Cheng Chang

Kuen-Ru Chuang

Yu-Jiun Shen

Chuan-Ming Chang

Keun-Ru Chuang

Chen Ou

Jen-Inn Chyi

Biing-Jye Lee

Mu-Jen Lai

Chiung-Yu Chang

Chin-Fu Ku

Ming-Yung Jow

Jinn-Kung Sheu

A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0<x1≤1, 0≤x2≤1, 0≤x3≤1, 0≤x4<1, and x1≠x2; and wherein the first functional layer includes a first thickness, the second functional layer includes a second thickness, and the second thickness is greater than the first thickness.

Semiconductor power device

A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises AlGaN, a material of the first functional layer comprises AlGaN, 0&#x3c;x1&#x2264;1, 0&#x2264;x2&#x2264;1, and x1&#x2260;x2. The interlayer includes a carbon doped or an iron doped material.

A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

High electron mobility transistor and methods for manufacturing the same

A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered substrate structure is effectively integrated with a transition layer of AlN/AlGaN disposed thereon, a buffer layer disposed on the transition layer having a C&#x2014;(Al)GaN/u-GaN multiple stacking layered structure, a channel layer, a barrier layer, and an optional SiNinterlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate. Higher breakdown voltage and improved overall device quality with respect to epitaxy-induced bow, warp, and cracking issues are achieved by the semiconductor power device.

A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Method of making a multilayer structure

Light emitting diode having a transparent substrate

Method for manufacturing a light emitting diode having a transparent substrate

An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

Light emitting diode having an insulating substrate

The present invention discloses a light emitting diode (LED) by using a P-type ZnTe layer or a ZnSe layer as a substrate. To match the lattice between the substrate and blue light LED of cubic crystal, a BP(boron phosphide) buffer layer of single crystal is formed on the substrate. When the blue light LED emits blue light of wavelength from 450 nm to 470 nm, the ZnTe or ZnSe substrate absorbs the blue light and emits yellow-green light of wavelength 550 nm. Thus, white light is produced by mixing the blue light and the yellow-green light.

White light LED

A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts.

Light-emitting diodes with high illumination

Growing community of inventors

Hsinchu, Taiwan

Chia-Cheng Liu