Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Chia-Chen Chen

Shang-Chieh Chien

Chia-Hao Hsu

Jeng-Horng Chen

Anthony Yen

Li-Jui Chen

Chia-Ching Huang

Jui-Ching Wu

Shinn-Sheng Yu

Tzung-Chi Fu

Po-Chung Cheng

Shu-Hao Chang

Yu-Fu Lin

Shang-Ying Wu

Chi-Lun Lu

Ming-Chin Chien

Wen-Shiou Luo

Tsung-Yu Chen

Ming-Hsun Tsai

Shih-Chang Shih

Tzu-Hsiang Chen

Hsien-Chang Lin

Chih-Tsung Shih

Yen-Cheng Lu

Chun-Lin Louis Chang

Bo-Tsun Liu

Han-Lung Chang

Kuo-Tung Tiao

Shao-Hua Wang

Jen-Yang Chung

Yen-Hsun Chen

Wei-Jia Huang

Shang-Yi Lin

Li-Kai Cheng

Chih-Ming Chen

Shih-Ming Chang

Chia-Hao Yu

Chia-Jen Chen

Pei-Cheng Hsu

Hong-Long Chou

Hung-Chang Hsieh

Yu Chao Lin

Sheng-Kang Yu

Chieh-Jen Cheng

Chy-Lin Wang

Tung-Jung Chang

Tung-Fa Liou

Cheng-Yuan Tang

Tzu-Wei Kao

Shih-Pin Chao

Wei-Hung Liu

Chi Ming Yang

Tzuan-Ren Jeng

Chang-Sheng Chu

Yu-Tang Li

Tsiao-Chen Wu

Shuang-Chao Chung

Chun-Chuan Lin

Lung-Pin Chung

Tzu-Li Lee

Chir-Weei Chang

Wei-Chih Lai

Kuo-Chang Kau

Tzung-Han Lin

Ying-Yu Chen

Chuan-Chung Chang

Tian-Yuan Chen

Po-Fu Yen

Chen-Hao Wei

Shun-Der Wu

Tsang-Gang Lin

Po-Hung Wang

Chih-Hsiang Yu

Zhong-Yi Haung

Hsiang-Yu Chou

Yung-Lin Chen

Jeng-Feng Wu

Chih-Cheng Hsu

Chuan-Chi Wang

Jun-Mein Wu

Wei-Yih Ho

Yi-Leh Wu

Yu-Lung Hung

Chi-Tsung Liu

Shi-Nine Yang

Chih-Yi Chiu

Kang Chou Lin

Chun-Tse Hsiao

Yung-Teng Yu

An exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas includes: a main exhaust pipe above the semiconductor manufacturing equipment and having a top surface on a first side and a bottom surface on a second side, a first branch pipe connected to a source of a gas mixture containing the hazardous gas on the second side and connected to the main exhaust pipe through the top surface, a second branch pipe connected to a gas box on the second side and connected to the main exhaust pipe through the bottom surface, and a detector on the second branch pipe configured to detect presence of the hazardous gas and downstream to the gas box. The first and the second branch pipes are connected to the main exhaust pipe at a first location and a second location, respectively. The first location is more upstream than the second location.

Exhaust system with U-shaped pipes

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnHto Sn.

EUV light source and apparatus for lithography

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Exhaust system with u-shaped pipes

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

Droplet generator and method of servicing extreme ultraviolet radiation source apparatus

The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.

Lithography system with an embedded cleaning module

A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

EUV vessel inspection method and related system

Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.

Method to mitigate defect printability for ID pattern

An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

Apparatus and method for cleaning reticle stage

Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

System and method for performing lithography process in semiconductor device fabrication

An insole design method and an insole design system are provided, and the method includes: capturing an uncompressed free foot model by a depth camera and obtaining a free foot model three-dimensional image; capturing a pressed foot model stepped on a transparent pedal by the depth camera and obtaining a pressed foot model three-dimensional image; aligning the free foot model three-dimensional image with the pressed foot model three-dimensional image; calculating and obtaining a plantar deformation quantity according to the aligned free foot model three-dimensional image and the aligned pressed foot model three-dimensional image; and completing the designed insole according to a sole projection plane or a three-dimensional profile of the specific sole and the plantar deformation quantity.

Insole design method and insole design system

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Hsinchu, Taiwan

Chia-Chen Chen