Auo Corporation

Au Optronics Corporation

Chia-An Lee

Yi-Hong Chen

Kuan-Heng Lin

Yu-Hsin Huang

A light emitting device includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. The first electrode, the second electrode, and the third electrode are structurally separated. The third electrode at least has a first portion. The first portion of the third electrode is disposed on a side wall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.

Light emitting device having third electrode

A light emitting panel includes a circuit substrate, a plurality of first light emitting components, a plurality of second light emitting components, and a plurality of third light emitting components. The circuit substrate has a plurality of main pixel areas. Each main pixel area is divided into a first subpixel area, a second subpixel area, and a third subpixel area. The first light emitting components, the second light emitting components and the third light emitting components are located in the first subpixel areas, the second subpixel areas and the third subpixel areas respectively. The first light emitting components in two adjacent first subpixel areas are electrically connected in series. The size of each of the first light emitting components is larger than the size of each of the second light emitting components and the third light emitting components.

Light emitting panel

A pixel structure, including a first semiconductor layer, a first active layer, a second semiconductor layer, a second active layer, a third semiconductor layer, and an electrode layer that are sequentially stacked, is provided. A first portion of the electrode layer is electrically connected to a first portion of the first semiconductor layer through a first opening of a first portion of the third semiconductor layer, a first opening of a first portion of the second active layer, a first opening of a first portion of the second semiconductor layer, and a first opening of a first portion of the first active layer. A second portion of the electrode layer is electrically connected to a second portion of the second semiconductor layer through a second opening of a second portion of the third semiconductor layer and a second opening of a second portion of the second active layer.

Growing community of inventors

Hsinchu, Taiwan

Chia-An Lee