Southeast University

Csmc Technologies Fab2 Co., Ltd.

Hohai University

Chi Zhang

Weifeng Sun

Siyang Liu

Longxing Shi

Sheng Li

Shengli Lu

Dejin Wang

Kui Xiao

Jiaxing Wei

Xinyi Tao

Ningbo Li

Long Chen

Guipeng Sun

Feng Wang

Jie Li

Dawei Wang

Yixin Zhang

Xuping Zhang

Shun Wang

Li Lu

Yi Li

Lizhi Tang

Fei Xiong

Xiaohong Chen

Shuxuan Xin

Le Qian

Shen Li

Chen Ge

Wenlong Zhang

Yanfeng Ma

Mengli Liu

A heterojunction semiconductor device with a low on-resistance includes a metal drain electrode, a substrate, and a buffer layer. A current blocking layer is arranged in the buffer layer, a gate structure is arranged on the buffer layer, and the gate structure comprises a metal gate electrode, GaN pillars and AlGaN layers, wherein a metal source electrode is arranged above the metal gate electrode; and the current blocking layer comprises multiple levels of current blocking layers, the centers of symmetry of the layers are collinear, and annular inner openings of the current blocking layers at all levels gradually become smaller from top to bottom. The AlGaN layers and the GaN pillars are distributed in a honeycomb above the buffer layer.

Heterojunction semiconductor device with low on-resistance

The present invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device includes, in sequence from bottom to top: a metal drain electrode, a substrate, a buffer layer, and a drift region; further including: a composite column body which is jointly formed by a drift region protrusion, a columnar p-region and a columnar n-region on the drift region, a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a metal gate electrode and a source metal electrode. The composite column body is formed by sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching same. The channel layer and the passivation layer are formed in sequence by deposition. Thus, the above devices are divided into a cell region and a terminal region. The dielectric layer, the heavily doped semiconductor layer, the metal gate electrode and the source metal electrode only exist in the cell region, and the passivation layer of the terminal region extends upwards and is wrapped outside the channel layer. This structure can increase a threshold voltage of the device, improve the blocking characteristics of the device and reduce the size of a gate capacitance.

High-threshold power semiconductor device and manufacturing method thereof

A GaN power semiconductor device integrated with a self-feedback gate control structure comprises a substrate, a buffer layer, a channel layer and a barrier layer. A gate control area is formed by a first metal source electrode, a first P-type GaN cap layer, a first metal gate electrode, a first metal drain electrode, a second P-type GaN cap layer and a second metal gate electrode. An active working area is formed by the first metal source electrode, a third P-type GaN cap layer, a third metal gate electrode, a second metal drain electrode, the second P-type GaN cap layer and a second metal source electrode. The overall gate leaking current of the device is regulated by the gate control area, the integration level is high, the parasitic effect is small, and the charge-storage effect can be effectively relieved, thus improving the threshold stability of the device.

GaN power semiconductor device integrated with self-feedback gate control structure

The invention discloses an underwater umbilical cable which is capable of temperature and vibration measuring and three-dimensional shape reconstruction, wherein underwater umbilical cable is used to connect underwater equipment and aquatic equipment; the underwater umbilical cable comprises an outer sheath, armored steel wires, an inner sheath, a power cable, a communication optical cable, a steel pipe, three strain measuring optical fibers, three temperature measuring optical fibers, a distributed optical fiber strain interrogator, a distributed optical fiber temperature interrogator and a processor. The invention can collect the operation status data of the umbilical cable for a long time. The collected data is highly objective, can truly reflect the real-time operation status of the umbilical cables, and plays an important role in guaranteeing the long-term submarine oil and gas exploitation.

Underwater umbilical cable which is capable of temperature and vibration measuring and three-dimensional shape reconstruction

A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.

Gallium nitride power device and manufacturing method thereof

A heterojunction semiconductor device comprises a substrate; a second barrier layer is disposed on the second channel layer and a second channel is formed; a trench gate structure is disposed in the second barrier layer; the trench gate structure is embedded into the second barrier layer and is composed of a gate medium and a gate metal located in the gate medium; an isolation layer is disposed in the second channel layer and separates the second channel layer into an upper layer and a lower layer; a first barrier layer is disposed between the lower layer of the second channel layer and the first channel layer and a first channel is formed; a bottom of the metal drain is flush with a bottom of the first barrier layer; and a first metal source is disposed between the second metal source and the first channel layer.

Heterojunction semiconductor device having high blocking capability

The invention provides a graphene channel silicon carbide power semiconductor transistor, and its cellular structure thereof. Characterized in that, a graphene strip serving as a channel is embedded in a surface of the P-type body region and two ends of the graphene strip are respectively contacted with a boundary between the N+-type source region and the P-type body region and a boundary between the P-type body region and the N-type drift region, and the graphene strip is distributed in a cellular manner in a gate width direction, a conducting channel of a device is still made of graphene; in the case of maintaining basically invariable on-resistance and current transmission capacity, the P-type body regions are separated by the graphene strip, thus enhancing a function of assisting depletion, which further reduces an overall off-state leakage current of the device, and improves a breakdown voltage.

Graphene channel silicon carbide power semiconductor transistor

The present invention discloses a preparation method of a silver-modified spiral Titanium Dioxide (TiO) nano-fiber photocatalyst, comprising the following steps: preparing a spiral TiOnano-fiber; preparing a nano-silver aqueous solution; and preparing a silver-modified spiral TiOnano-fiber photocatalyst. The photocatalyst is coupled with the spiral structure of the nano-fiber and nano-silver particles with a specific size, improving the photocatalytic activity of the photocatalyst. Moreover, the sterilizing and biological pollution resisting capacities of the photocatalyst are also improved through the modified nano-silver particles, and therefore, the photocatalyst can be widely applied to a deep sewage treatment system.

Preparation and application of silver-modified spiral titanium dioxide nano-fiber photocatalyst

Growing community of inventors

Jiangsu, China

Chi Zhang