E.i. Dupont De Nemours and Company

Dupont Displays Inc

Lg Chem, Ltd

Uniax Corporation

Chi Zhang

Che-Hsiung Hsu

Yong Cao

Daniel David Lecloux

Sunghan Kim

Charles Douglas MacPherson

Hjalti Skulason

Huawen Li

Gang Yu

Weiying Gao

Weishi Wu

Gene M Rossi

Kerwin D Dobbs

Viacheslav V Diev

Ian David Parker

Marie B O'Regan

John D Allen

Michael R Moseley

Che Hsiung Hsu

There is provided a compound having Formula I In Formula I: Arand Arare the same or different and are aryl, heteroaryl, or deuterated analogs thereof; Land Lare the same or different and are H, D, halogen, aryl, arylamino, crosslinkable groups, deuterated aryl, deuterated arylamino, or deuterated crosslinkable groups; R-Rare the same or different at each occurrence and are D, F, CN, hydrocarbon aryl, heteroaryl, aryloxy, fluoroaryl, alkyl, fluoroalkyl, alkoxy, fluoroalkoxy, amino, silyl, siloxane, siloxy, germyl, deuterated hydrocarbon aryl, deuterated heteroaryl, deuterated aryloxy, deuterated fluoroaryl, deuterated alkyl, deuterated fluoroalkyl, deuterated alkoxy, deuterated fluoroalkoxy, deuterated amino, deuterated silyl, deuterated siloxane, deuterated siloxy, or deuterated germyl, wherein adjacent groups selected from R-Rcan be joined together to form a fused ring; a is 0 or 1; b is 0 or 1; x and x1 are the same or different and are an integer from 0-5; y and y1 are the same or different and are an integer from 0-4; n is an integer greater than 0, with the proviso that when n=1, Land Lare selected from Cl, Br, crosslinkable groups and deuterated crosslinkable groups; and BzF is benzofluorene.

Electroactive materials

The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer which is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

Buffer bilayers for electronic devices

Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays.

Water dispersible polythiophenes made with polymeric acid colloids

The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

Devices are provided comprising conductive or semiconductive layers comprising compositions comprising aqueous dispersions of polythiophenes having homopolymers or co-polymers of Formula I(a) or Formula I(b) and at least one colloid-forming polymeric acid. Methods of making such compositions and using them in organic electronic devices are further provided.

The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer including a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

Multilayer anode structures () for electronic devices () such as polymer light-emitting diodes are described. The multilayer anodes include a high conductivity organic layer () adjacent to the photoactive layer () and a low conductivity organic layer () between the high conductivity organic layer and the anode's electrical connection layer (). This anode structure provides polymer light emitting diodes which exhibit high brightness, high efficiency and long operating lifetime. The multilayer anode structure of this invention provides sufficiently high resistivity to avoid cross-talk in passively addressed pixellated polymer emissive displays; the multilayer anode structure of this invention simultaneously provides long lifetime for pixellated polymer emissive displays.

Multilayer structures as stable hole-injecting electrodes for use in high efficiency organic electronic devices

Compositions are provided comprising aqueous dispersions of polythiophenes and colloid-forming polymeric acids. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays in combination with metal nanowires or carbon nanotubes in applications such as drain, source, or gate electrodes in thin film field effect transistors.

Compositions are provided comprising aqueous dispersions of polythiophenes having homopolymers or co-polymers of Formula I(a) or Formula I(b) and at least one colloid-forming polymeric acid. Methods of making such compositions and using them in organic electronic devices are further provided.

Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids

Variable resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising variable resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for varying the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a co-solvent to the aqueous solution of PEDT/PSS prior to casting.

Variable resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in electronic devices

High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).

High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices

Compositions are provided comprising polyaniline (PANI) with poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAAMPSA) as the counterion (PANI/PAAMPSA) and an amount of poly(styrenesulfonic acid) (PSS) sufficient to reduce the conductivity of the composition relative to PANI/PAAMPSA. Invention compositions may further comprise poly(acrylamide) (PAM). Invention compositions are useful as high resistance buffer layers for use in electroluminescent devices (such as, organic light emitting diodes (OLEDs)).

High resistance polyaniline blend for use in high efficiency pixellated polymer electroluminescent devices

A film including polyaniline in the emeraldine salt form (PANI) and poly(2-acrylamido-2 methyl-1-propanesulfonic acid) (PAAMPSA) as a counterion and optionally a water-soluble host polymer, the film is useful in an electronic device such as pixellated displays.

Growing community of inventors

Goleta, CA, United States of America

Chi Zhang