Xidian University

Chi Zhang

Dong Wang

Yue Hao

Jincheng Zhang

Jing Ning

Boyu Wang

Peijun Ma

A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of &#x3c;100&#x3e;.

Growing community of inventors

Xi'an, China

Chi Zhang