University of Electronic Science and Technology of China

Institute of Electronic and Information Engineering of Uestc in Guangdong

Chi Xie

Bo Zhang

Zehong Li

Jinping Zhang

Min Ren

Yuci Lin

Wei Gao

Zhiheng Su

A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Trench MOS device with improved single event burn-out endurance

Growing community of inventors

Chengdu, China

Chi Xie