TSMC Solid State Lighting Ltd.

Visera Technologies Company Limited

Industrial Technology Research Institute

Epistar Corporation

Chi-Xiang Tseng

Hsiao-Wen Lee

Min-Sheng Wu

Tien-Min Lin

Chin-Poh Pang

Wu-Chieh Liu

Cheng-Lin Yang

Yu-Sheng Tang

Tien-Ming Lin

Jung-Tang Chu

Chun-Chuan Lin

I-Hsiu Chen

Hsin-Hsiang Lo

Chun-Hung Lai

Huang-Chen Guo

Chen-Wei Lu

A lighting apparatus includes a substrate, a plurality of light-emitting dies disposed on the substrate and spaced apart from one another, a continuous structure disposed over the substrate and covering the light-emitting dies within, and a filler. The light-emitting dies each are covered with an individual phosphor coating and the filler is between the continuous structure and the phosphor coating for each of the light-emitting dies. The lighting apparatus has a substantially white appearance when the plurality of light-emitting dies is turned off.

Lighting apparatus

The present disclosure involves a method. The method includes providing a substrate having a layer disposed thereon. A plurality of light-emitting devices is attached to the layer. A gel is applied over the substrate. The gel covers the plurality of light-emitting devices. The gel is shaped into a plurality of lenses. The lenses each cover a respective one of the light-emitting devices. The light-emitting devices are separated from one another. The substrate and the layer are removed.

Method and apparatus for fabricating phosphor-coated LED dies

A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.

A lighting apparatus includes a substrate, a plurality of light-emitting dies, a continuous encapsulation structure, and a gel. The plurality of light-emitting dies are disposed on the substrate and spaced apart from one another. The light-emitting dies each are covered with a respective individual phosphor coating conformally. The continuous encapsulation structure has a curved surface disposed over the substrate and encapsulates the light-emitting dies within. The gel is disposed between the encapsulation structure and the phosphor coating for each of the light-emitting dies. The gel contains diffuser particles. The lighting apparatus has a substantially white appearance in an off state when the plurality of light-emitting dies is turned off.

LED emitter with improved white color appearance

The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile.

The present disclosure involves lighting apparatus. The lighting apparatus includes a light-emitting device. The light-emitting device includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is coated around the light-emitting device. A lens houses the light-emitting device and the photo-conversion layer within. The lens includes a first sub-layer and a second sub-layer. The first and second sub-layers have different characteristics.

The present disclosure involves a method of packaging light-emitting diodes (LEDs). According to the method, a plurality of LEDs is provided over an adhesive tape. The adhesive tape is disposed on a substrate. In some embodiments, the substrate may be a glass substrate, a silicon substrate, a ceramic substrate, and a gallium nitride substrate. A phosphor layer is coated over the plurality of LEDs. The phosphor layer is then cured. The tape and the substrate are removed after the curing of the phosphor layer. A replacement tape is then attached to the plurality of LEDs. A dicing process is then performed to the plurality of LEDs after the substrate has been removed. The removed substrate may then be reused for a future LED packaging process.

Method and apparatus for packaging phosphor-coated LEDs

The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs.

An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Image sensor device with silicon microstructures and fabrication method thereof

Color filter arrays (CFA) and image sensors using same are provided. A color filter array includes a plurality of first color filter patterns respectively interlaced with a plurality of second color filter patterns, wherein the first and second color filter patterns comprise a plurality of color filters of at least three different colors of red (R), green (G) and blue (B) filters, and the first and second color filter patterns are not mirror symmetrical, and a blue (B) filter in one of the first color filter patterns is adjoined by a red (R) filter in one of the second color filter patterns adjacent thereto and/or a red (R) filter in one of the first color filter patterns is adjoined by a blue filter in one of the color filter patterns adjacent thereto.

Color filter arrays and image sensors using the same

A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.

Microlens array and image sensing device using the same

A method for designing a microlens array on a pixel array is disclosed. A radial distance of each pixel from a central pixel in a pixel array is calculated, in which the central pixel acts as an origin of an X-Y coordinate. A chief ray angle of each pixel is determined according to the corresponding radial distance. A microlens shift with respect to the corresponding pixel is determined according to the corresponding chief ray angle. Each microlens shift combines an X-axis direction shift with a Y-axis direction shift, and the X-axis direction shift ratio is different from the Y-axis direction shift ratio. A plurality of microlenses is arranged according to the corresponding microlens shifts to form a microlens array on the pixel array.

Design of microlens on pixel array

A light source device and projector using the same is provided. The light source device includes multiple light source modules and a multi-channel optical light tube. The multi-channel optical light tube includes multiple channels, each of which has a light guiding portion and corresponds to one or more of the light source modules. The light source module transmits the output light to the corresponding light channel, and the light guiding portion of each light channel is provided with a reflective surface for combining the light input through the light channels to the multi-channel optical light tube, thus providing the output of the light source device.

Growing community of inventors

Kaohsiung, Taiwan

Chi-Xiang Tseng