Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Chi-Woo Kim

Myung-Koo Hur

Chang-Oh Jeong

Mun-Pyo Hong

Yang-Sun Kim

Young-Jae Tak

Chun-Gi You

Jang-Soo Kim

Dong-Hoon Lee

Hyang-Shik Kong

Sung-Hee Cho

Hyong-Gon Lee

Bo-Young An

Woo-Suk Chung

Jin-Woo Park

Seung-Kyu Lee

Jae-Beom Choi

Chul-Ho Kim

Joo-Hyung Lee

Jin Hee Jeon

Kee-Han Uh

Keum-Nam Kim

Sang-Jin Pak

Yong-Kyu Jang

Il-Gon Kim

Soo-Guy Rho

Gun-Shik Kim

Cheol-Min Kim

Ok-Keun Song

Young-Mo Koo

Mu-Kyung Jeon

Seong-Jun Lee

Young-Jin Chang

Ho-Suk Maeng

Seong-il Park

Soong-Yong Joo

You-Min Cha

Dong-Byum Kim

Se-Jin Chung

Kee-Chan Park

Won-Kie Chang

Dae-Sung Choi

Han-Na Jo

Jin-Oh Park

Min-Hwan Choi

Ui-Jin Chung

Young-chan Kweon

Seong-Ho Jeong

Chua-Gi You

Jueng-Gil Lee

Kyung-seob Kim

Ho-Chul Kang

Young-Kap Seo

A display substrate includes an insulating substrate, a first gate line, a first lower electrode, a second lower electrode, a first upper electrode, and a second upper electrode. The insulating substrate includes a first pixel region and a second pixel region located at a first direction from the first pixel region. The first gate line extends in a second direction crossing the first direction on the insulating substrate. The first and the second lower electrodes are in the first and the second pixel regions, respectively. The first upper electrode overlaps the first lower electrode in the first pixel region and includes a first slit pattern extending in a third direction different from the first and the second directions. The second upper electrode overlaps the second lower electrode in the second pixel region and includes a second slit pattern extending in a fourth direction different from the first to the third directions.

Display substrate, display panel and display device

A method of manufacturing an organic light emitting display apparatus by utilizing a deposition apparatus for forming an organic layer on a substrate includes: fixing the substrate to a mask assembly for forming a common layer or a mask assembly for forming a pattern layer in a loading unit; when the one or more deposition assemblies are separated from the substrate, forming an intermediate layer by depositing a deposition material discharged from the one or more deposition assemblies in a deposition unit of the deposition apparatus onto the substrate while the substrate is moved relative to the one or more deposition assemblies by a first conveyer unit; and separating the substrate on which the deposition is finished from the mask assembly for forming the common layer or the mask assembly for forming the pattern layer in an unloading unit.

Method of manufacturing organic light emitting display apparatus

A shift register including a plurality of stages, each of them including a first node, a second node, and a third node being in a high-impedance state when the first node is in a high-impedance state. The shift register includes an input circuit unit inputting a driving voltage to the first node in response to an output signal of a previous stage, a driving circuit unit generating an output signal according to a voltage of the first node, and a holding unit holding the output signal at a level of a gate-off voltage according to a voltage of the second node in an inactive period of a current stage, in which the holding unit comprises a first diode which applies a clock signal to the second node.

Shift register and display apparatus that addresses performance problems caused by transistor leakage current

A liquid crystal display with an integrated touch screen panel is disclosed. According to some aspects, conductive patterns or conducting patterns provided to the LCD are used as driving electrodes of the touch screen panel. A driving electrode of the touch screen panel may be formed on one surface of a polarizing plate or window attached to the LCD so as to be positioned close to a contact point, thereby improving touch sensitivity.

Liquid crystal display with integrated touch screen panel

A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization

A display device includes a plurality of pixels, wherein each pixel includes: a light emitting element; a first capacitor connected between a first node and a second node; a driving transistor having an input terminal, an output terminal, and a control terminal connected to the second node where the driving transistor supplies a driving current to the light emitting element to emit light; a first switching unit supplying a first reference voltage to the driving transistor according to a first scanning signal and connecting the first node to a data voltage or the driving transistor; and a second switching unit supplying a driving voltage to the driving transistor according to a second scanning signal and connecting the first node to the data voltage. Accordingly, variations in threshold voltage of the driving transistor can be compensated for so that it is possible to display a uniform image.

Organic light emitting diode display device and driving method thereof

First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300&#xb0; C. for 5 minutes, and a semiconductor layer an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

Method for manufacturing contact structures of wiring

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrode, and an image defect area caused by the impurity ions is screened with the black matrix.

Liquid crystal display having additional signal lines to define additional pixel regions

First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300&#xb0; C. for 5 minutes, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

Method for manufacturing contact structures of wirings

In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

Liquid crystal display

Disclosed is a reflection type liquid crystal display device. A second substrate () is provided opposite to a first substrate () where pixels are formed. A liquid crystal layer () is interposed between the first and second substrates. A reflection electrode () is formed on the first substrate (). The reflection electrode () includes first and second regions () having relatively high and low heights so as to scatter a light, respectively. The first regions () have first widths in a first direction wider than second widths in a second direction so that a reflectivity in the first direction is higher than a reflectivity in the second direction. The widths of the grooves () are varied in a desired direction regardless of shapes of the lenses (), to thereby improve the viewing angle and reflectivity of the display in the specific direction.

Reflection liquid crystal display device with reflection electrode region having two widths

The Mo or MoW composition layer has a low resistivity of less than 15 &#x3bc;&#x3a9;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF+Ocan prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF+HCl (+He) or SF+Cl(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF, CHF, CHClF, CHF, and CF, yields good TFT characteristics, and Hplasma treatment can further improve the TFT characteristics.

Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl (&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

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Seoul, South Korea

Chi-Woo Kim