Advanced Semiconductor Engineering, Inc.

Chi-Tsung Chiu

Hui-Ying Hsieh

Hui Hua Lee

Chih-Pin Hung

Kuo-Hsien Liao

Kuo-Hua Chen

Meng-Jen Wang

Pao-Nan Lee

Chun Hao Chiu

Ying-Te Ou

Kay Stefan Essig

Cheng Yuan Chen

Sung-Mao Wu

Chen-Chuan Fan

Jui-Cheng Huang

Cheng-Hung Ko

Kuang-Hsiung Chen

Bernd Karl Appelt

Jian-Cheng Chen

Che-Ya Chou

Chi-Han Chen

Chih-Yi Huang

Yu-Ching Sun

Fa-Hao Wu

Cheng-Hsi Chuang

Wei-Chi Yih

Yu-Chi Chen

Chiuan-You Ding

A semiconductor package structure is provided. The semiconductor package structure includes a lead frame and passive component. The lead frame includes a paddle and a plurality of leads. The lead frame includes a first surface and a second surface opposite to the first surface. The passive component includes an external connector. A pattern of the external connector is corresponding to a pattern of the plurality of leads of the lead frame.

Semiconductor package structure having a lead frame and a passive component

A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Semiconductor device package

A semiconductor package structure includes a base, at least one semiconductor element, a first dielectric layer, a second dielectric layer and a circuit layer. The semiconductor element is disposed on the base and has an upper surface. The first dielectric layer covers at least a portion of a peripheral surface of the semiconductor element and has a top surface. The top surface is non-coplanar with the upper surface of the semiconductor element. The second dielectric layer covers the semiconductor element and the first dielectric layer. The circuit layer extends through the second dielectric layer to electrically connect the semiconductor element.

Semiconductor package structure and method for manufacturing the same

A semiconductor package structure includes a base material, at least one semiconductor chip, an encapsulant, a depression structure, a redistribution layer and at least one conductive via. The semiconductor chip is disposed on the base material. The encapsulant is disposed on the base material and covers the at least one semiconductor chip. The encapsulant has an outer side surface. The depression structure is disposed adjacent to and exposed from of the outer side surface the encapsulant. The redistribution layer is disposed on the encapsulant. The conductive via is disposed in the encapsulant and electrically connects the semiconductor chip and the redistribution layer.

A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Semiconductor device package and method of manufacturing the same

A semiconductor package device includes a first die, an adhesive layer, and an encapsulant layer. The first die comprises a first electrode at a first surface of the first die and a second electrode at a second surface of the first die opposite to the first surface of the first die. The adhesive layer is disposed on the first surface of the first die. The encapsulant layer encapsulates the first die and the adhesive layer, wherein substantially an entire surface of the second electrode is exposed from the encapsulant layer.

Semiconductor package device and method of manufacturing the same

A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.

A semiconductor device package includes a first conductive base, a first semiconductor die, a dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The first conductive base defines a first cavity. The first semiconductor die is on a bottom surface of the first cavity. The dielectric layer covers the first semiconductor die, the first surface and the second surface of the first conductive base and fills the first cavity. The first patterned conductive layer is on a first surface of the dielectric layer. The second patterned conductive layer is on a second surface of the dielectric layer.

A semiconductor device package includes a substrate and a semiconductor device disposed on a surface of the substrate. The semiconductor device includes a first contact pad and a second contact pad disposed on an upper surface of the semiconductor device. The semiconductor device package further includes a conductive bar disposed on the first contact pad, and a conductive pillar disposed on the second contact pad. A method of making a semiconductor device package includes (a) providing a substrate; (b) mounting a semiconductor device on the substrate, wherein the semiconductor device comprises a first contact pad and a second contact pad on an upper surface of the semiconductor device; (c) forming a dielectric layer on the substrate to cover the semiconductor device; (d) exposing the second contact pad by forming a hole in the dielectric layer; and (e) applying a conductive material over the dielectric layer and filling the hole.

Semiconductor device package and method of making the same

A semiconductor device package including a substrate, a first device module, a second device module, and an package body. The first device module and the second device module are disposed side-by-side on a carrier surface of the substrate. The first device module includes first connecting elements provided with a first pitch. The second device module includes second connecting elements provided with a second pitch. The first pitch is different from the second pitch. The package body is disposed on the carrier surface and covers the first chip module and the second chip module. The package body includes first openings exposing the first connecting elements and second openings exposing the second connecting elements.

Semiconductor device packages having a side-by-side device arrangement and stacking functionality

The semiconductor package includes a first substrate having a first surface and a second surface opposite to the first surface. A circuit portion is formed on the first surface of the substrate, wherein the circuit portion includes a wave guiding slot and a microstrip line overlapping the wave guiding slot. A chip is disposed on the circuit portion. An antenna is formed on the second surface of the substrate, wherein the antenna overlaps the wave guiding slot.

Semiconductor structure having aperture antenna

Described herein are semiconductor device packages with EMI shielding and related methods. In one embodiment, a semiconductor device package includes: (1) a substrate unit including a grounding element; (2) a semiconductor device disposed adjacent to an upper surface of the substrate unit; (3) a package body disposed adjacent to the upper surface of the substrate unit and covering the semiconductor device; and (4) an EMI shield disposed adjacent to exterior surfaces of the package body and electrically connected to a connection surface of the grounding element. A lateral surface of the package body is substantially aligned with a lateral surface of the substrate unit, and the connection surface of the grounding element is electrically exposed adjacent to the lateral surface of the substrate unit. The grounding element corresponds to a remnant of an internal grounding via, and provides an electrical pathway to ground electromagnetic emissions incident upon the EMI shield.

Semiconductor device packages with electromagnetic interference shielding

A band pass filter includes an original circuit. An interaction of at least two of components of the original circuit produces at least a mutual capacitor or at least a mutual inductor, which constitutes a resonance circuit with the original circuit to produce at least a transmission zero for increasing the attenuation rate of the stop band.

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Kaohsiung, Taiwan

Chi-Tsung Chiu