Electronics and Telecommunications Research Institute

Hyundai Electronics Industries Co. Ltd.

Konkuk University Industrial Cooperation Corp

Faculty of Science and Technology New University of Lisbon

Chi Sun Hwang

Sang Hee Park

Hye Yong Chu

Chun Won Byun

Byoung Gon Yu

Kyoung Ik Cho

Min Ki Ryu

Sung Min Yoon

Him Chan Oh

Yoon Ho Song

Shin Hyuk Yang

Jeong Ik Lee

Seung Youl Kang

Ji Sun Kim

Kee Chan Park

Soon Won Jung

Jae Eun Pi

Doo Hee Cho

Sung Mook Chung

Byeong Hoon Kim

Min Woo Oh

Hong Kyun Leem

Tao Ren

Jin Ho Lee

Yong Kim

Yong Suk Yang

Lee Mi Do

Woo Seok Cheong

Kwang Bok Kim

Mi Kyung Kim

Cheol Soo Park

Kyu Ha Baek

Jae Heon Shin

Ji Young Oh

Choong Heui Chung

Rodrigo F P Martins

Ana R X Barros

Youn Kyung Kim

Nuno F O Correia

Pedro M C Barquinha

Joon Dong Kim

Vitor M L Figueiredo

Chang Hun Han

Hong Kyung Leem

Elvira M C Fortunato

Disclosed is a dual display device having a vertical structure, in which a reflective display device and a self-emissive display device are formed on one substrate in a vertical structure so as to enable a reflective display or a self-emissive display according to a situation and provide a high resolution display. The dual display device having a vertical structure includes: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor: a reflection adjusting layer formed on the white light emitting device; and a color converting layer formed on the reflection adjusting layer.

Dual display device with vertical structure

Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern.

Self-aligned thin film transistor and fabrication method thereof

Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.

Self-aligned thin film transistor with doping barrier and method of manufacturing the same

Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Inverter, NAND gate, and NOR gate

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu&#x2014;Sn alloy, and a nickel tin oxide containing a Ni&#x2014;Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Semiconductor device and method of manufacturing the same

Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed.

Method for manufacturing oxide thin film transistor

Disclosed is a DC voltage conversion circuit of a liquid crystal display apparatus, including: a main pumping circuit including a plurality of thin film transistors and configured to output voltage for driving a liquid crystal display apparatus when the plurality of thin film transistors are alternately turned on or off; and a switch control signal generator configured to control voltages applied to gates of the plurality of thin film transistors by inversion of a clock signal, in which each thin film transistor is turned on when positive gate-source voltage is applied thereto, and turned off when negative gate-source voltage is applied thereto.

DC voltage conversion circuit of liquid crystal display apparatus

Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Nonvolatile memory cell and method of manufacturing the same

A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

Method of manufacturing transparent transistor with multi-layered structures

Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

Active matrix organic light emitting diode

Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Transparent nonvolatile memory thin film transistor and method of manufacturing the same

Growing community of inventors

Daejeon, South Korea

Chi Sun Hwang