Industrial Technology Research Institute

National Yang Ming Chiao Tung University

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Atomic Energy Council-institute of Nuclear Energy Research

Chi-Shen Lee

Chai-Yuan Sheu

Cheng-Chung Chen

Yu-Chang Sun

Chi-Lin Chen

Sheng-Feng Weng

Yun-Sheng Chen

Yu-chi Lee

Shuo-Wei Liang

Yuan-Tung Dai

Chien-Wei Wu

Chia-Hsiang Chen

Yi-Hsun Huang

Te-Ming Chu

Yuan-Chia Chang

Ho-Chen Hsieh

Cheng-Hsing Chen

Tsun-Neng Yang

Jiun-Jye Chang

Yung-Fu Wu

Shan-Ming Lan

Yun-Hsin Wang

Ming-Chao Kuo

Pi-Fu Chen

Yen-Chang Tzeng

Jyh-Perng Chiu

Tsong-Yang Wei

Ming-Chang Lin

Liang-Tang Wang

Shun-Fa Huang

Ching-Hsuan Tang

Ting-Kuo Chang

Yu-Ming Kang

Li-Fu Lin

Der-Jhy Shieh

Jung Fang Chang

Wen-Chih Hu

Ping-Wen Tsai

Chich Shang Chang

The present invention provides a catalyst composition for producing hydrogen and preparation method and use thereof, wherein the catalyst composition comprises a catalytic component and a supporter having a pyrochlore structure. By using the catalyst composition of the present invention, carbon deposition can be reduced and the oxidative steam reforming of ethanol could be operated for a long period of time with high ethanol conversion rate and selectivity of hydrogen.

Catalyst composition and method for producing hydrogen and preparation method thereof

The present invention provides a catalyst for producing hydrogen and a preparing method thereof. The method includes the steps of adding a first metal source, a second metal source, a third metal source and a cerium source into a first organic solvent containing a surfactant to form a colloidal mixture, wherein a metal of the first metal source is a Group IIIB metal; a metal of the second metal source is selected from the group consisting of alkali metals, alkaline earth metals and Group IIIB metals, and a metal of the third metal source is a transition metal; calcining the colloidal mixture to form a metal solid solution; and allowing the metal solid solution to be carried on a carrier to obtain the catalyst. When the catalyst of the present invention is used for an ethanol oxidation reformation, the reaction temperature of the ethanol oxidation reformation can be significantly decreased. After the catalyst is used for long periods of time, the ethanol oxidation reformation still has high ethanol conversion ratio and hydrogen selection ratio.

Catalyst for producing hydrogen and preparing method thereof

The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350&#xb0; C. to 550&#xb0; C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800&#xb0; C. to 1000&#xb0; C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.

Ethanol reforming catalyst composition and method of producing ethanol reforming catalyst

The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

[object Object]

A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Manufacturing method for a TFT electrode for preventing metal layer diffusion

A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

Method of manufacturing a TFT array panel for a LCD

A method of fabricating a thin film transistor (TFT) array involves ion replacement by oxidation-reduction processes for implementing the metal wiring layout of TFT-LCDs. This can overcome metal etching difficulties and achieve automatic alignment. The method of the invention replaces traditional lithographic etching techniciues.

Method of fabricating thin film transistor TFT array

A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Method for forming a single-crystal silicon layer on a transparent substrate

The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor

A method for forming a conductive layer is disclosed, which has the following steps. First, a substrate is provided, and then a patterned photoresist layer having an undercut is formed on the substrate. After that, at least one conductive layer is deposited on the substrate. Finally, the patterned photoresist layer is lifted off; wherein the shape of the conductive layer remaining on the substrate is complementary to that of the patterned photoresist layer.

Method for forming a conductive layer

A method for manufacturing thin film transistor panels in order to obviate the lowstability of conventional laser annealing processes, and the resultant low quality of the produced polycrystal silicon thin film. According to the method of the invention, form a transparent insulator on the front surface of a silicon substrate. Form a thin film transistor structure and transparent electrode on the upper surface of the transparent insulator. Bond a transparent substrate onto the front surface of the silicon substrate. After that, remove a portion of the silicon substrate by polishing or etching the back of the silicon substrate to obtained a transparent thin film transistor panel. The transparent electrode can also be formed on the bottom surface of the transparent insulator. Also, the transparent substrate can be bonded onto the back of the silicon substrate. Then reduce the thickness of the silicon substrate to generate a crystal silicon thin film. Form a thin film transistor structure layer and the transparent electrode required by the thin film transistor panel on the crystal silicon thin film.

Manufacturing method of thin film transistor panel

A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.

Method for manufacturing thin film transistors

Growing community of inventors

Hsinchu, Taiwan

Chi-Shen Lee