United Microelectronics Corp.

Chi-Piao Cheng

Te-Sung Hung

Po-Yuan Cheng

Yung-Chieh Kuo

Chung-Jun Cheng

Been Chen

Mu-Liang Liao

Yu-Jen Huang

Sheng-Yih Ting

Li-Chun Liang

Sheng-Yu Chen

A wafer supporting device of a sputter apparatus includes a pedestal positioned in a sputtering chamber and used to load a wafer for sputtering, a deposition ring having a recess positioned on a peripheral portion of the pedestal, and a cover ring positioned on the pedestal and the deposition ring. The cover ring has a gate corresponding to the recess.

Wafer supporting device of a sputtering apparatus

A chemical-mechanical polishing apparatus comprising at least a polishing platen, a polishing pad, a slurry supplying piping, a polishing pad conditioner, a chemical reagent supplying piping and a splitting piping is provided. The polishing platen has a plurality of slurry outlets disposed thereon and the polishing pad is disposed on the polishing platen. The slurry supplying piping is connected to the bottom of the polishing platen for delivering slurry to the surface of the polishing pad through the slurry outlets. The polishing pad conditioner is disposed over the polishing pad. The chemical reagent supplying piping is connected to the polishing pad conditioner for supplying the chemical reagent to the polishing conditioner. The splitting piping is connected between the slurry supplying piping and the chemical reagent supplying piping for providing chemical reagent to the surface of the polishing pad through the slurry supplying piping and the slurry outlets.

Chemical-mechanical polishing apparatus and method of conditioning polishing pad

A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.

All-in-one polishing process for a semiconductor wafer

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Taipei, Taiwan

Chi-Piao Cheng