Intel Corporation

University of California

Leland Stanford Junior University

Canon Kabushiki Kaisha

Chi On Chui

Jack T Kavalieros

Prashant Majhi

Wilman Tsai

Krishna Chandra Saraswat

Takao Yonehara

Ammar Munir Nayfeh

Ajey Poovannummoottil Jacob

Pei-Yu E Chiou

Bruce S Dunn

Leland Smith

Yajia Yang

Daniel Membreno

Yufei Mao

Paul C McIntyre

Baylor B Triplett

Kyeong-Sik Shin

A novel Self-Locking Optoelectronic Tweezers (SLOT) for single microparticle manipulation across a large area is provided. DEP forces generated from ring-shape lateral phototransistors are utilized for locking single microparticles or cells in the dark state. The locked microparticles or cells can be selectively released by optically deactivating these locking sites.

Self-locking optoelectronic tweezer and its fabrication

In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer wrapped around the QW layer. Other embodiments are described and claimed.

Forming a non-planar transistor having a quantum well channel

Described here are a device and a method for detecting the presence of a biomarker using the device, wherein the device comprises (a) a substrate comprising a plurality of electrodes; (b) a plurality of nanowire field-effect transistor sensors integrated or assembled on the substrate and connected to the electrodes; and (c) a microfluidic component disposed on the substrate and adapted to communicate fluidically with the nwFET sensors.

Biomolecular detection test strip design

The present invention is directed to a multiwire nanowire field effect transistor (nwFET) device for the measurement. The device includes a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET to form a node. Additionally, the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode. The sensing nanowire is derivatized with a plurality of immobilized capture probes that are specific for a target(s) of interest. The device is used to detect biomolecules or to detect the change in the ionic environment of a sample. In a further embodiment, the sensing nanowire is derivatized with amino, carboxyl or hydroxyl groups. Upon a change in ionic environment, or binding of a molecule to the sensing nanowire, the sensing nanowire current (I) fluctuates. This fluctuation is amplified and readout as the nanowire FET drain current (I). Accordingly, the present invention provides for label-free detection of biomolecules and may find use as a point-of-care diagnostic device.

Nanowire field-effect transistor biosensor with improved sensitivity

Embodiments of the present disclosure relate to a solid-state supercapacitor. The solid-state supercapacitor includes a first electrode, a second electrode, and a solid-state ionogel structure between the first electrode and the second electrode. The solid-state ionogel structure prevents direct electrical contact between the first electrode and the second electrode. Further, the solid-state ionogel structure substantially fills voids inside the first electrode and the second electrode.

Solid-state supercapacitor

Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

Germanium substrate-type materials and approach therefor

A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing semiconductor region, comprising three or more species of charge-neutral lattice-forming atoms, laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate. Thus, a strained crystalline substrate may be provided. In another embodiment, a semiconductor region with a crystalline lattice of three or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate.

Strain-inducing semiconductor regions

Growing community of inventors

San Mateo, CA, United States of America

Chi On Chui