Xiamen San'an Optoelectronics Co., Ltd

Anhui Sanan Optoelectronics Co., Ltd.

Chi-Ming Tsai

Yung-Ling Lan

Chan-Chan Ling

Chia-Hung Chang

Changwei Song

Feilin Xun

Wen-Pin Huang

Han Jiang

Li-Cheng Huang

Qin Wang

Yu Wang

Chiahao Tsai

Bin Fang

Chih-Chung Chiu

Liangliang Gui

Jinkuang Dong

Shan Wang

Zhaoming Huang

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/AlInGaN stack, where 0<x1≤1 and 0≤y1<1. An LED device including the multi-quantum well structure is also disclosed.

Multi-quantum well structure and LED device including the same

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Semiconductor light emitting device

The disclosure illustrates a composite substrate and a method for manufacturing the same, the method including: disposing a mask layer on an upper surface of a substrate; forming a plurality of mask patterns spaced apart from each other to form a plurality of intervals thereamong; filling a dummy metallic material into the intervals; removing the mask patterns to form a mesh-like dummy metallic layer; and removing the dummy metallic layer while depositing a nitride layer so as to form a mesh-like structure confined by the nitride layer and the substrate. The disclosure also illustrates a method for manufacturing a light-emitting device using the composite substrate.

Composite substrate, method for manufacturing the same and method for manufacturing light-emitting device using the same

A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Nitride-based light-emitting diode device

A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/AlInGaN/GaN stack, where 0&#x3c;x1&#x2264;1 and 0&#x2264;y1&#x3c;1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

Growing community of inventors

Wuhu, China

Chi-Ming Tsai