Micron Technology Incorporated

Chi Ming Chu

Scott Anthony Stoller

Pitamber Shukla

Kenneth William Marr

Robert W Mason

Hossein Afkhami

Preston Allen Thomson

Niccolo' Righetti

Jason Lee Nevill

Sheng-Huang Lee

Sandeep Reddy Kadasani

Exemplary methods, apparatuses, and systems including memory self-recovery management to correct failures due to soft-error rate events. The self-recovery manager detects a failure of a memory device. The self-recovery manager retrieves a set of register values from the memory device. The self-recovery manager stores the set of register values from the memory device. The self-recovery manager issues a reset command to the memory device, the reset command including generating a re-initialized set of register values. The self-recovery manager compares the set of register values with the re-initialized set of register values. The self-recovery manager triggering a self-recovery attempt using the comparison of the set of register values with the re-initialized set of register values.

Memory system failure detection and self recovery of memory dice

A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.

System driven pass-through voltage adjustment to improve read disturb in memory devices

A method of operating a memory device comprises generating a target voltage using a pump circuit of the memory device, the target voltage to be applied to a word line or pillar of a memory cell of the memory device; providing an indication of current generated by the pump circuit after the pump circuit output reaches the target voltage; and determining when the current generated by the pump circuit is greater than a specified threshold current and generating a fault indication according to the determination.

Device field degradation and factory defect detection by pump clock monitoring

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Boise, ID, United States of America

Chi Ming Chu