Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi-Lung Lee

Chiting Cheng

Yangsyu Lin

Chien-Chi Tien

Chien Chi Tien

A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.

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Taipei, Taiwan

Chi-Lung Lee