Sharp Kabushiki Kaisha Corporation

Cera M Gmbh

Virginia Tech Intellectual Properties Inc

Wd Media, LLC

Virginia Polytechnic Institute and State University

Chi Kong Kwok

Seshu B Desu

Henry S Nishihira

Shaun H Chen

Bing-Shiuan Chang

Dilip P Vijay

Yasuo Sakane

In K Yoo

The V Tran

A composite lubricant for recording disk media, a recording disk media including a layer of the composite lubricant, and method of manufacturing the same are described. The composite lubricant may include a non-phosphazene component and a phosphazene component where the non-phosphazene component is a difunctional perfluoropolyether compound terminated with first and second polar end groups, the first polar end group comprising a first number of hydroxyls and the second polar end includes a second number of hydroxyls, greater than the first number of hydroxyls. The phosphazene component may be a difunctional perfluoropolyether compound terminated with a phosphazene functional group and with a third polar end group, the third polar end group comprising a third number of hydroxyls equal to the second number of hydroxyls.

Composite lubricant for hard disk media

A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a semiconductor device produced in accordance with the process. The lead titanate seeding layer allows the subsequent lead zirconate titanate to be annealed at a significantly lower seeding temperature, to lessen interdiffusion among the films, electrodes and substrate and to lessen thermal stresses.

Low temperature seeding process for ferroelectric memory device

A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.

Method of forming multilayered electrodes for ferroelectric devices

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Fremont, CA, United States of America

Chi Kong Kwok