Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi-Jen Yang

Chun-Chieh Wang

Yueh-Ching Pai

Huai-Tei Yang

Hsien-Ming Lee

Po-Yu Lin

Yi-Ting Wang

Tsung-Ta Tang

Chi-Yu Chou

Sheng-Wei Yeh

The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Formation and in-situ etching processes for metal layers

Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Gate structure and semiconductor device having the same

Gate structure, method of forming the same, and semiconductor device having the same

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Taipei, Taiwan

Chi-Jen Yang