Samsung Electronics Co., Ltd.

Chi-Hwan Lee

Min-Soo Kim

Young-Sik Kim

Kyo-Min Sohn

Sang-Joon Hwang

Min-Sang Park

Myeong-O Kim

Gi-young Yang

Won-Il Bae

Ho-Seok Seol

Provided is a method of detecting a concentrated address of a semiconductor device using an n-bit address. The method includes dividing the n-bit address into k groups, wherein each of n and k is an integer equal to or greater than 2, for each group of the k groups, detecting one or more concentrated sub addresses corresponding to the group, and generating at least one concentrated address by combining the one or more concentrated sub addresses for the k groups.

Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same

A method of detecting a degradation of a semiconductor device including calculating a first number of first traps accumulated in a gate insulation layer of the semiconductor device over an operation time of the semiconductor device; calculating the second number of second traps accumulated at an interface between the gate insulation layer and a substrate over the operation time; and calculating the degradation of the semiconductor device relative to the operation time using the first number of the first traps and the second number of the second traps.

Method of detecting degradation of semiconductor devices and method of detecting degradation of integrated circuits

Growing community of inventors

Daegu, South Korea

Chi-Hwan Lee