Pericom Semiconductor Corporation

Chi-Hung Hui

Xianxin Li

Paul C Tong

A bus switch chip is limited to operating with a power-supply voltage of 1.8 volts relative to a 0-volt ground. Differential bus signals switched through the bus switch chip swing from 2.7 to 3.3 volts, well above the chip's specified power-supply voltage. The bus switch chip is level-shifted by applying a 1.5-volt signal as the chip's ground, and a 3.3-volt signal as its power supply, so the chip's net power supply is within the specification at 1.8 volts. High-Definition Multimedia Interface (HDMI) and Digital Visual Interface (DVI) require that the differential signals are never driven to ground. However, some non-compliant video transmitters drive differential signals to ground when disabled. External pullup resistors or internal pullup transistors in the bus switch chip are added to the bus signals from non-compliant transmitters to pull disabled signals above the 1.5-volt chip ground to prevent damage from signals below the chip's 1.5-volt ground.

Visual or multimedia interface bus switch with level-shifted ground and input protection against non-compliant transmission-minimized differential signaling (TMDS) transmitter

A non-volatile memory cell uses a p+ diffusion region spaced a lateral distance from the n+ drain of the n-channel programmable transistor. A diode between this p+ diffusion and the n+ drain has a low breakdown voltage because of the close spacing of the high-doping n+ and p+ diffusions. This diode generates electrons when avalanche breakdown occurs. The avalanche electrons are swept up into the programmable gate during programming. Since the avalanche electrons are generated by the diode rather than by the programmable transistor itself, programming efficiency no longer depends on the channel length and other parameters of the programmable transistor. The breakdown voltage of the diode is adjusted by varying the lateral spacing between the n+ drain and the p+ diffusion. Smaller lateral spacing enter avalanche breakdown at lower voltages and thus program the programmable transistor at a lower drain voltage. A drain voltage less than the power supply is possible with the diode, eliminating the need for a charge pump for the drain. A deep p-type implant under the n+ drain can also form the diode. The diode can be used for input-protection (ESD) devices.

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Saratoga, CA, United States of America

Chi-Hung Hui