Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi-Hung Chuang

Chih-Wei Chang

Hung-Yi Huang

Keng-Chu Lin

Sung-Li Wang

Chun-Hsien Huang

Shuen-Shin Liang

Chia-Hung Chu

Ken-Yu Chang

Hsu-Kai Chang

Chun-I Tsai

Chien Chang

Kai-Yi Chu

Ming-Hsing Tsai

Ching-Hwanq Su

Li-Wei Chu

Min-Hsiu Hung

Yi-Hsiang Chao

Chun-Wen Nieh

Kan-Ju Lin

Yu-Hsiang Liao

Ya-Huei Li

Kuan-Yu Yeh

The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

Interconnect structure and manufacturing method for the same

A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

Formation method of semiconductor device structure with metal-semiconductor compound region

The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

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Changhua County, Taiwan

Chi-Hung Chuang