Bae Systems Information and Electronic Systems Integration Inc.

Chi-Hua Yang

Thomas J McIntyre

Jason F Ross

David Sargent

A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.

Method for fabricating infrared sensors

A method for fabricating a metal-insulator-metal capacitor (MIMCap) is disclosed. A first metal layer is provided on top of an oxide layer. A nitride layer is then deposited on the first metal layer. The nitride layer and the first metal layer are etched to form a MIMCap metal layer. The gaps among the MIMCap metal layer are filled with a plasma oxide, and the excess plasma oxide is polished using the nitride layer a polish stop. After removing the nitride layer, a dielectric layer and a second metal layer are deposited on the MIMCap metal layer. Finally, the dielectric layer and the second metal layer are etched to form a set of MIMCap structures.

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Manassas, VA, United States of America

Chi-Hua Yang