United Microelectronics Corp.

Chi-Hsuan Tang

Kuang-Hsiu Chen

Chun-Jen Chen

Chung-Ting Huang

Yu-Shu Lin

Chao-Nan Chen

Jhong-Yi Huang

Guan-Ying Wu

Kai-Hsiang Wang

Yu-Ren Wang

Chun-Wei Yu

Chia-Jong Liu

Sung-Yuan Tsai

Bo-Shiun Chen

Wei-Chih Chuang

Bing-Yang Jiang

Yu-Lin Cheng

Shi-You Liu

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Method of fabricating semiconductor device having epitaxial structure

A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer adjacent to the gate structure, forming a second spacer adjacent to the first spacer, forming an epitaxial layer adjacent to the second spacer, forming a second cap layer on the epitaxial layer, and then forming a first cap layer on the second cap layer. Preferably, a top surface of the first cap layer includes a V-shape and the first cap layer and the second cap layer are made of different materials.

A transistor with strained superlattices as source/drain regions includes a substrate. A gate structure is disposed on the substrate. Two superlattices are respectively disposed at two sides of the gate structure and embedded in the substrate. The superlattices are strained. Each of the superlattices is formed by a repeated alternating stacked structure including a first epitaxial silicon germanium and a second epitaxial silicon germanium. The superlattices serve as source/drain regions of the transistor.

Transistor with strained superlattice as source/drain region

Semiconductor device having epitaxial structure

A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.

Growing community of inventors

Kaohsiung, Taiwan

Chi-Hsuan Tang