Macronix International Co., Ltd.

Epistar Corporation

Chi-Hao Huang

Chin-Cheng Yang

Cheng-Hsien Li

Wei-Jung Chung

Hsin-Hsiung Huang

Jennhwa Fu

Wei-Hung Wang

Jenn-Hwa Fu

A semiconductor device and method of fabricating the same are provided. The semiconductor device includes a substrate having a trench and an etching stop layer. The etching stop layer is disposed in the substrate and surrounds the bottom surface and a portion of a sidewall of the trench.

Semiconductor device having etching control layer in substrate and method of fabricating the same

A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.

Layout design for fanout patterns in self-aligned double patterning process

A light-emitting device includes a substrate including an upper surface; a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the light-emitting stack includes a first surface and a second surface opposite to the first surface toward to the upper surface; a plurality of depressions formed in the light-emitting stack and penetrating the second semiconductor layer, the active layer and a portion of the first semiconductor layer; an insulative layer covering the second surface of the light-emitting stack; a connector including a first portion and a second portion; and an electrode disposed at a side of the light-emitting stack and electrically connecting the connector, wherein the first portion of the connector is formed in the plurality of depressions, the second portion of the connector is between the insulative layer and the light-emitting stack.

Light-emitting device

An interconnect structure including a first dielectric layer, a first conductive layer, a second conductive layer, a capping layer, and a via is provided. The first dielectric layer has a first trench and a second trench. The first conductive layer is located in the first trench. The second conductive layer is located in the second trench, and a top surface of the second conductive layer is lower than a top surface of the first dielectric layer. The capping layer having a via opening exposing a portion of the first conductive layer covers the first dielectric layer, the first conductive layer, and the second conductive layer. The via located on the first conductive layer and the first dielectric layer located between the first conductive layer and the second conductive layer is filled into the via opening and electrically connected to the first conductive layer.

Interconnect structure and fabricating method thereof

A method for manufacturing a light-emitting device comprising the steps of: providing a first substrate, a chip area, and a street area; forming a light-emitting structure on the first substrate; forming a conductive structure between the first substrate and the light-emitting structure; removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area; forming a first passivation layer on the light-emitting structure in the chip area; forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer; forming a through-hole in the first passivation layer, and forming an electrode in the through-hole.

Light-emitting device manufacturing method

The present disclosure provides a light-emitting device having a patterned interface composed of a plurality of predetermined patterned structures mutually distinct, wherein the plurality of predetermined patterned structures are repeatedly arranged in the patterned interface such that any two neighboring patterned structures are different from each other. The present disclosure also provides a manufacturing method of the light-emitting device. The method comprises the steps of providing a substrate, generating a random pattern arrangement by a computing simulation, forming a mask having the random pattern arrangement on the substrate, and removing a portion of the substrate thereby transferring the random pattern arrangement to the substrate.

Growing community of inventors

Hsinchu, Taiwan

Chi-Hao Huang