Taiwan Semiconductor Manufacturing Comp. Ltd.

Semiconductor Device Including Capacitor and Resistor

Chi-Han Yang

Kuan-Yu Chen

Lung-Hui Chen

Shih Chan Wei

Shih J Wei

In some implementations, one or more semiconductor processing tools may form a via for a semiconductor device. The one or more semiconductor processing tools may deposit a metal plug within the via. The one or more semiconductor processing tools may deposit an oxide-based layer on the metal plug within the via. The one or more semiconductor processing tools may deposit a resistor on the oxide-based layer within the via. The one or more semiconductor processing tools may deposit a first landing pad and a second landing pad on the resistor within the via. The one or more semiconductor processing tools may deposit a first metal plug on the first landing pad and a second metal plug on the second landing pad.

Resistor within a via

A metallization structure of an integrated circuit (IC) includes: an intermetal dielectric (IMD) layer; a patterned metal layer embedded in the IMD layer; a patterned top metal layer disposed on the IMD layer; electrical vias comprising via material passing through the IMD layer and connecting the patterned top metal layer and the patterned metal layer embedded in the IMD layer; and a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes: a first capacitor metal layer comprising the via material contacting an MIM capacitor landing area of the patterned metal layer embedded in the IMD layer; a second capacitor metal layer comprising the via material contacting a first MIM capacitor terminal area of the patterned top metal layer; and an insulator layer disposed between the first capacitor metal layer and the second capacitor metal layer.

Metal-insulator-metal capacitor within metallization structure

A semiconductor device includes a capacitor and a resistor. The capacitor includes a first plate, a capacitor dielectric layer disposed over the first plate, and a second plate disposed over the capacitor dielectric layer. The resistor includes a thin film. The thin film of the resistor and the first plate of the capacitor, formed of a same conductive material, are defined in a single patterning process.

Semiconductor device including capacitor and resistor

Structures and formation methods of a semiconductor device structure are provided. A method for forming a semiconductor device structure includes forming a first patterned conductive layer. The method also includes forming a dielectric layer covering the first conductive layer. The method further includes forming a conductive via in the dielectric layer. In addition, the method includes forming a resistor layer and a protection layer over the dielectric layer. The method also includes patterning the protection layer to form a protection feature and patterning the resistor layer to form a resistor feature overlapping the first conductive layer. The resistor feature is electrically connected to the first conductive layer through the conductive via. The method further includes forming a second conductive layer over the dielectric layer. The top surface of the resistor feature maintains covered by the protection feature during the formation of the second conductive layer.

Structure and formation method of semiconductor device structure

A metal-insulator-metal capacitor includes a bottom metal line and a top metal line disposed above the bottom metal line. An insulating material layer is between the bottom metal line and the top metal line, which the insulating material layer is an inter-metal-dielectric layer.

Growing community of inventors

Hsinchu, Taiwan

Chi-Han Yang