Visera Technologies Company Limited

Chi-Han Lin

Zong-Ru Tu

Han-Lin Wu

Tzu-Wei Huang

Sheng-Chuan Cheng

Huang-Jen Chen

Hao-Min Chen

Chih-Kung Chang

Wei-Ko Wang

Yu-Kun Hsiao

Li-Wei Chen

Hsin-Wei Mao

Cheng-Yang Wei

Chih-Chieh Chang

Kuei-An Lin

Yao-Chung Tung

An image sensor includes: a plurality of sensing portions; a color filter layer disposed on the sensing portions; and a micro-lens disposed on the color filter layer. The micro-lens includes a positive radius of curvature, and a dish structure including a negative radius of curvature is formed within the micro-lens.

Image sensor having dish structure formed within micro-lens

An optical element is provided. The optical element includes a substrate; a plurality of metal grids formed on the substrate; an oxide layer formed on the substrate between the plurality of metal grids; and a plurality of organic layers formed on the plurality of metal grids, wherein the width of the organic layer is greater than the width of the metal grid, and there is at least one gap between the organic layer and the oxide layer.

Optical elements

A method forming an image sensor includes: providing a substrate including a plurality of sensing portions; forming a color filter layer on the substrate; forming a micro-lens material layer on the color filter layer; and forming a hard mask pattern on the micro-lens material layer, wherein the hard mask pattern has a first gap and a second gap larger than the first gap. The method includes reflowing the hard mask pattern into a plurality of dome shapes; transferring the plurality of dome shapes into the micro-lens material layer to form a plurality of micro-lenses; and forming a top film conformally on the plurality of micro-lenses.

Image sensor and method forming the same

A solid-state imaging device having a first area and a second area surrounding the first area is provided. The solid-state imaging device includes a substrate having a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer disposed on the substrate. The color filter layer includes a plurality of color filter segments corresponding to the plurality of photoelectric conversion elements. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid, a waveguide material in spaces of the waveguide partition grid, and an anti-reflection film on the waveguide partition grid and the waveguide material. The width of the top of the waveguide partition grid is larger than the width of the bottom of the waveguide partition grid.

Solid-state imaging device having a waveguide partition grid with variable grid widths

A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

Optical elements and method for fabricating the same

The solid-state imaging device includes a first set of units disposed in a substrate and including a first pixel unit, a second pixel unit and a third pixel unit. The first pixel unit, the second pixel unit and the third pixel unit are sequentially arranged and include respective photoelectric conversion elements. The solid-state imaging device also includes a metal grid structure disposed over the first set of units and including a first portion and a second portion. The first portion is disposed between the first pixel unit and the second pixel unit and has a first width. The second portion is disposed between the second pixel unit and the third pixel unit and has a second width that is greater than the first width.

Solid-state imaging devices

A method for fabricating an optical element is provided. The fabrication method includes the following steps. A substrate is provided. A plurality of metal grids are formed on the substrate. A first organic layer is formed on the substrate between the plurality of metal grids. A second organic layer is formed on the first organic layer and the plurality of metal grids. The second organic layer and the first organic layer are etched to leave the plurality of metal grids and a plurality of patterned second organic layers on the plurality of metal grids. An optical element fabricated by the method is also provided.

An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

Image sensor

An image sensor is provided. The image sensor includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter array is disposed above the semiconductor substrate. The color filter array includes a first color filter, a second color filter and a third color filter. The image sensor further includes an isolated partition disposed in the color filter array to surround one of the first, second and third color filters. The isolated partition has a refractive index that is lower than the refractive indexes of the first, second and third color filters.

Image sensors

A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer.

Solid-state imaging devices having a microlens layer with dummy structures

A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.

An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters respectively disposed at the R, G and B pixels. The image sensor also includes an IR pass filter disposed at the IR pixel and an IR filter stacked with the R, G and B filters, wherein the IR filter cuts off at least IR light with a specific wavelength. Furthermore, a method of forming an image sensor is also provided.

Image sensors and methods of forming the same

A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions, and each of the partitions is disposed between two adjacent color filter segments. The color filter layer and the partition grid are disposed in the same layer. In addition, the partitions include a first partition disposed at a center line of the pixel array and a second partition disposed at an edge of the pixel array. The second partition has a top width that is larger than the top width of the first partition.

Solid-state imaging devices with enhanced angular response

Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.

Solid-state imaging devices and methods of fabricating the same

A solid-state imaging device is provided. The solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements. A color filter layer is disposed above the photoelectric conversion elements. A light shielding layer is disposed between the color filter layer and substrate. The light-shielding layer has a plurality of first light shielding partitions extended along a first direction and a plurality of second light shielding partitions extended along a second direction perpendicular to the first direction. The first light shielding partitions have different dimensions along the second direction and the second light shielding partitions have different dimensions along the first direction.

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Zhubei, Taiwan

Chi-Han Lin