Advanced Semiconductor Engineering, Inc.

Chi-Han Chen

Mei-Ju Lu

Chang-Yu Lin

Pao-Nan Lee

Chih-Pin Hung

Jr-Wei Lin

Hung-Yi Lin

Chieh-Chen Fu

Ying-Chieh Shyu

Chi-Tsung Chiu

Chi Tsung Chiu

Yi-Min Chin

Jia-Hao Zhang

Zong-Yu Yang

Pei-Jung Yang

Chien Hua Chen

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

Electronic device package and method for manufacturing the same

An optoelectronic device package includes a first redistribution layer (RDL), a first electronic die disposed over the first RDL, wherein an active surface of the first electronic die faces the first RDL. The optoelectronic device package further includes a second electronic die disposed over the first RDL, and a photonic die disposed over and electrically connected to the second electronic die. An active surface of the second electronic die is opposite to the first RDL.

Optoelectronic device package and method of manufacturing the same

A semiconductor device package includes a first semiconductor device having a first surface, an interconnection element having a surface substantially coplanar with the first surface of the first semiconductor device, a first encapsulant encapsulating the first semiconductor device and the interconnection element, and a second semiconductor device disposed on and across the first semiconductor device and the interconnection element.

Semiconductor package device method of manufacturing the same

A semiconductor package structure includes a first semiconductor die having an active surface and a passive surface opposite to the active surface, a conductive element leveled with the first semiconductor die, a first redistribution layer (RDL) being closer to the passive surface than to the active surface, a second RDL being closer to the active surface than to the passive surface, and a second semiconductor die over the second RDL and electrically coupled to the first semiconductor die through the second RDL. A first conductive path is established among the first RDL, the conductive element, the second RDL, and the active surface of the first semiconductor die.

Semiconductor package structure

A semiconductor module includes a photonic integrated circuit and a receptacle. The photonic integrated circuit includes a substrate, a waveguide disposed on the substrate, and a recess in the substrate and having a first width. The receptacle is bonded to a top surface of the substrate and aligning with the recess. The receptacle and the recess jointly form a cavity, and the receptacle has a second width greater than the first width. A method for manufacturing the semiconductor module is also disclosed.

Semiconductor package structure and method for manufacturing the same

Semiconductor package device and method of manufacturing the same

A semiconductor device includes a substrate, a passivation layer and an optical element. The substrate includes a surface and a sidewall. The passivation layer is disposed on the surface of the substrate. The optical element is disposed in the substrate and exposed from the sidewall of the substrate. The sidewall of the substrate is inclined towards the surface of the substrate at an angle of approximately 87 degrees to approximately 89 degrees.

Semiconductor device packages

The present disclosure relates to a semiconductor package structure and a manufacturing method thereof. The semiconductor package structure comprises a first dielectric layer, a die pad, an active component, at least one first metal bar, at least one second metal bar and a through via. The first dielectric layer has a first surface and a second surface opposite to the first surface. The die pad is located within the first dielectric layer. The active component is located within the first dielectric layer and disposed on the die pad. The first metal bar is disposed on the first surface of the first dielectric layer, and electrically connected to the active component. The second metal bar is disposed on the second surface of the first dielectric layer. The through via penetrates the first dielectric layer and connects the at least one first metal bar to the at least one second metal bar.

Semiconductor package structure and semiconductor manufacturing process

The semiconductor package includes a first substrate having a first surface and a second surface opposite to the first surface. A circuit portion is formed on the first surface of the substrate, wherein the circuit portion includes a wave guiding slot and a microstrip line overlapping the wave guiding slot. A chip is disposed on the circuit portion. An antenna is formed on the second surface of the substrate, wherein the antenna overlaps the wave guiding slot.

Semiconductor structure having aperture antenna

A semiconductor transformer includes a first coil inductor and a second coil inductor. The first coil inductor has a first port, a second port and a first coil inductor wall, the first coil inductor wall having a height substantially equal to a thickness of the substrate. The second coil inductor has a third port, a first extension wall connected to the third port, a fourth port, a second extension wall connected to the fourth port and a second coil inductor wall.

Semiconductor transformer device and method for manufacturing the same

The present invention relates to a silicon wafer having testing pad(s) and a method for testing the same. The silicon wafer includes a silicon substrate, an insulation layer, at least one testing pad and a dielectric layer. The testing pad includes a first metal layer, a second metal layer and at least one first interconnection metal. The first metal layer is disposed on the insulation layer, and has a first area and a second area. The first area and the second area are electrically insulated with each other. The second metal layer is disposed above the first metal layer. The first interconnection metal connects the second area of the first metal layer and the second metal layer. Therefore, when a through hole and a seed layer are formed in the following processes, the through hole is estimated whether it is qualified by probing the testing pad to know whether the seed layer connects the second area of the first metal layer of the testing pad, thus the yield rate of the following processes is increased.

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Kaohsiung, Taiwan

Chi-Han Chen