Sony Corporation

Praxair S.t. Technology, Inc.

Materials Research Corporation

Praxair Technology, Inc.

Chi-Fung Lo

Darryl Draper

Paul S Gilman

John Turn

Thomas J Hunt

Hidemasa Tamura

Norio Yokoyama

David P Strauss

Jaydeep Sarkar

Hung-Lee Hoo

Eiichi Shimizu

James Elliot Joyce

Tetsuya Kojima

Methods for manufacturing sputtering target assemblies and assemblies thereof are provided, particularly targets made of powders. Powders are adhered to a backing plate by use of a vacuum hot press, the powder preferably contacted by non-planar surfaces, and is compressed with at least about 95% density and substantially simultaneously diffusion-bonded to the backing plate.

Method for consolidating and diffusion-bonding powder metallurgy sputtering target

A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

Ternary aluminum alloy films and targets for manufacturing flat panel displays

An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder by hot-pressing the metal oxide powder in a graphite die assembly having a ceramic barrier sleeve disposed therein to isolate the metal oxide powder from the graphite die assembly components.

Apparatus and method for making metal oxide sputtering targets

A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less than about 50 &mgr;m and an oxygen content less than about 500 ppm is hot-isostatic pressed at a temperature of about 1200&deg; C. to about 1600&deg; C. and a pressure of at least about 15 ksi for at least about 3 hours. A high-purity sputter target is further achieved by using a tungsten starting powder having a purity higher than about 99.999%.

Method of making high-density, high-purity tungsten sputter targets

A method is provided for fabricating Cu/Cr sputter targets having a density of at least about 90% of theoretical density and an oxygen content of less than about 1000 ppm. According to the principles of the present invention, Cu and Cr powders, each having particles in the size range of about 20 &mgr;m to about 150 &mgr;m and having oxygen contents preferably less than about 1200 ppm and 600 ppm, respectively, are blended and pressed by hot pressing. A low-oxygen content, high-density Cu/Cr target is thereby achieved for the sputtering of thin films having a defect generation of about 0%.

High performance Cu/Cr sputter targets for semiconductor application

There is provided a method for fabricating high density sputter targets by pre-packing a powder bed by hot pressing or vibration between metal plates, followed by hot isostatic pressing. This method is especially suitable for preparing sputter targets with a radius to thickness ratio of at least 3 and a density of at least 96% of theoretical.

Method of making high density sputtering targets

A contoured sputtering target includes a target member of sputtering material having a top surface, a bottom surface and an outer peripheral surface. One or more contoured annular regions are formed on the top surface of the target member that extend radially inwardly from the outer peripheral surface and away from the bottom surface. The target member may further include planar, concave or central recessed regions formed in the top surface that are surrounded by the one or more contoured annular regions. The configuration of the target member reduces generation of contaminating particles from nodules that may form near the outer peripheral surface of the target during a sputtering operation. Methods of forming a contoured sputtering target are also disclosed.

Contoured sputtering target

Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.

Cryogenic annealing of sputtering targets

There is provided a method for fabricating intermetallic sputter targets of two or more elements in which a mixture of two or more elemental powders are blended and synthesized within a pressing apparatus at a temperature below the melting point of the lowest melting point element in the mixture, followed by heating the synthesized intermetallic powder in the pressing apparatus to a temperature below the melting point of the intermetallic structure while simultaneously applying pressure to the powder to achieve a final density greater than 90% of theoretical density. The powder metallurgy technique of the present invention provides a better microstructure than cast structures, and avoids contamination of the sputter target by eliminating the crushing step of synthesized intermetallic chunks necessitated by separate steps of synthesizing and pressing.

Manufacturing of high density intermetallic sputter targets

A method is provided for fabricating aluminum alloy sputtering targets having fine precipitates of a second phase material in small, randomly oriented and uniform grains. The method provided includes the steps of homogenizing the aluminum alloy billet at a temperature above the solidus temperature, deforming the billet, recrystallizing the billet at a temperature below the solidus temperature, and cryogenically deforming the billet. This minimizes second-phase precipitate size and prevents the formation of cubic structures, thereby generating fine uniform grain sizes having random orientation.

Method for fabricating randomly oriented aluminum alloy sputting targets

A single phase W-Ti sputter target and a method of manufacturing the target are disclosed. The target is produced by mixing powders of tungsten and titanium and subjecting the mixed powders to a pressing operation for a time, temperature and pressure sufficient to achieve a mutual solid solution of W and Ti, forming single .beta.(Ti,W) phase. The single phase sputtering target emits much less particulate during sputtering than conventional multiphase W-Ti targets of comparable density and composition.

Single phase tungsten-titanium sputter targets and method of producing

A method of fabricating an alloy sputtering target having fine precipitates of the second phase material and small, randomly oriented and uniform grains. The new method includes solution treatment to minimize second-phase precipitate size, cryo-deformation to prevent the formation of cubic structures and recrystallization to generate fine uniform grain sizes having a random orientation.

Method for fabricating randomly oriented aluminum alloy sputtering

An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder by enveloping the metal oxide powder in at least one layer of a barrier material while the powder is hot-pressed using a graphite die assembly.

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Fort Lee, NJ, United States of America

Chi-Fung Lo