Microjet Technology Company, Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Ene Technology Inc.

Microjet Technology, Ltd.

Microsoft Technology Co., Ltd.

Chi-Feng Huang

Yung-Lung Han

Hao-Jan Mou

Wei-Ming Lee

Shih-Chang Chen

Chia-Chung Chen

Chang-Yen Tsai

Victor Chiang Liang

Ching-Sung Lin

Jia-Yu Liao

Chun-Yi Kuo

Ying-Lun Chang

Hsuan-Kai Chen

Ta-Wei Hsueh

Fu-Huan Tsai

Hung-Hsin Liao

Hsien-Chung Tai

Li-Pang Mo

Tsung-I Lin

Che-Wei Huang

Chin-Chuan Wu

Chin-Wen Hsieh

Shou-Hung Chen

Chih-Kai Chen

Chung-Hao Chu

Jheng-Wei Chen

Chia-Hao Chang

Han-Min Tsai

Tzu-Jin Yeh

Chao-Chih Chen

Wen-Hsiung Liao

Rong-Ho Yu

Shu Fang Fu

Cheng-Ming Chang

Chung-Wei Kao

Yang Ku

Hsiao-Chun Lee

Hsieh-Hung Hsieh

Tse-Hua Lu

Meng-Chang Ho

Yi-Ting Lu

Wen-Yang Yang

Chewn-Pu Jou

Hong-Lin Chu

Chun-Lung Tseng

Kwo-Yuan Shi

Yu-Lin Wei

Ching-Yu Yang

Fang-Ting Kuo

Chun-Pei Wu

Chun-Hon Chen

Chin-Nan Chang

Chi-Chang Yang

Chien-Tang Wen

Lin-Huei Fang

Chiu-Lin Lee

Mei-Yen Chen

Yu-Tzu Chen

Ankush Chaudhary

Clement Hsingjen Wann

Chih-Hsin Ko

Huan-Neng Chen

Fu-Lung Hsueh

Chao-Ching Cheng

Chun-Chieh Lu

Chih-Hsien Lin

Chu Fu Chen

Mingo Liu

Po-Wen Chiu

Chih-Feng Lin

Chu-Fu Chen

Tz-Hau Guo

Shu-Fang Fu

Jyun-Yi Jhang

Shou-Cheng Cheng

Shyh-Chyi Wong

Ching-Hung Kao

Tzyh-Cheang Lee

Chun-Hung Liao

Chin-Lung Chen

Chia-Cheng Pao

Ke-Ming Huang

Hsiang-Dyi Wu

Shen-Wen Chen

Syun-Ming Jang Jang

Tien-I Bao

Chun-Hung Chen

Feng Yuan

Chih-Ping Chao

Yen-Jen Chen

Sally Liu

Chih Hsin Lin

Ping-Hao Lin

Yung-Chang Chen

Chiao-Chun Hsu

Yi-Cheng Huang

Ching-Hua Chu

Chun-Lin Fang

Chang-Chih Chen

John Chern

A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Semiconductor structure having asymmetric source/drain regions

A breast pump includes a main body and a breast milk suctioning shield. The main body has an accommodation space. The breast milk suctioning shield is assembled in the accommodation space and detachably connected to the main body. A front end of the breast milk suctioning shield has a breast shielding portion, and a nipple passage extends from a rear end of a center portion of the breast shielding portion. One or more deformable members are assembled with an annular connection portion between the breast shielding portion and the nipple passage, and the deformable member is controlled to be inflated or deflated by a first air pump.

Breast pump

A method of preventing and handling indoor air pollution is disclosed and includes: providing a portable gas detection device and plural gas exchangers allowed to inhale outdoor gas, purify and filter the inhaled gas, and introduce the inhaled gas into the indoor space, wherein an air pollutant in the gas within the indoor space is exported out to the outdoor for exchanging; disposing 1˜50 gas exchangers within the indoor space, wherein the gas exchangers have an exported airflow rate of 200˜1600 CADR, and the indoor space has a volume of 247.5˜1650 m; and remotely controlling the gas exchangers to enable filtration, purification and gas exchange by the portable gas detection device when the portable gas detection device detects an air pollutant in the indoor space, to reduce the air pollutant in the indoor space to a safe detection value within 10 minutes, and achieve a clean, safe and breathable condition.

Method of preventing and handling indoor air pollution

A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.

Calibration method for emulating group III-V semiconductor device and method for manufacturing group III-V semiconductor device

A purification device for exercise environment is provided and includes a main body, a purification unit, a gas guider and a gas detection module. The purification unit, the gas guider and the gas detection module are disposed in the main body to guide the gas outside the main body through the purification unit for filtering and purifying the gas, and discharge a purified gas. The gas detection module detects particle concentration of suspended particles contained in the purified gas. The gas guider is controlled to operate and export the gas at an airflow rate within 3 minutes. The particle concentration of the suspended particles contained in the purified gas, which is filtered by the purification unit, is reduced to and less than 0.75 μg/m. Consequently, the purified gas is filtered, and an exerciser in an exercise environment can breathe with safety.

Purification device for exercise environment

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

High-implant channel semiconductor device and method for manufacturing the same

A method for notifying a service life of a filter includes steps of providing a filter for filtering an air pollution source; providing a gas detection device for detecting the air pollution source and outputting the detection data of the air pollution source; providing a connection device for receiving, computing and comparing the detection data of the air pollution source detected by the gas detection device, so as to display a reducing rate of filtering efficiency for the filter; and when the reducing rate of filtering efficiency for the filter reaches a preset alert value, the connection device sends out a notification alert of replacing the filter.

Method for notifying service life of filter

A breast pump includes a main body, a breast milk suctioning shield, and one or more air pumps. The breast milk suctioning shield is assembled in an accommodation space of the main body and detachably connected to the main body. A front end of the breast milk suctioning shield has a breast shielding portion, and a nipple passage extends from a rear end of a center portion of the breast shielding portion. One or more deformable members and a non-deformable supporting member are assembled with an annular connection portion located between the breast shielding portion and the nipple passage. The air pump has an intake port and an exhaust port. The intake port is controlled by a first valve controller to suction the nipple passage and generate a negative pressure, and the exhaust port is controlled by a second valve controller to inflate or deflate the deformable member.

A miniature gas detection and purification device is disclosed for a user to carry with him, and includes a main body, a purification module, a gas guider and a gas detection module. The gas detection module detects the gas in the environment surrounding the user to obtain a gas detection datum, and controls the gas guider to be operated according to the gas detection datum, so that gas is inhaled into the main body and flows through the purification module for filtration and purification, and the gas purified is finally guided to an area nearby the user.

Miniature gas detection and purification device

A miniature gas detection system includes a separation flow channel fabricated by semiconductor processes and a filling material disposed in the main flow channel of the separation flow channel to perform adsorption and separation on compositions of compounds contained in the gas introduced into the main flow channel. Each detection flow channel is formed with a monitoring chamber, and a micro-electromechanical systems pump is formed on the bottom portion of the monitoring chamber. In each monitoring chamber, a light emitted from the light emitting element is reflected by the two mirrors and received by the light detection element. Therefore, the light detection elements obtain and output spectra of the compositions of compounds contained in the gas according to the differences in optical adsorptions of the compositions of compounds for lights with different wavelengths, so as to analyze and determine the type of the gas contained in the compositions of compounds.

Miniature gas detection system

Gas detection device

A smart cloth includes a cloth body, a control body, actuation air-permeable components, temperature sensing components, and a health-monitoring device. The health-monitoring device includes a bio-sensing module, a blood glucose sensor, a blood pressure measurement module, and a gas bag. The temperature information of the wearer is detected by the temperature sensing components and outputted to the microprocessor of the control body, so that the microprocessor controls the actuation air-permeable components to perform the gas-guiding operation to adjust an apparent temperature of the wearer for providing wearing comfortableness. The bio-sensing module, the blood glucose sensing module, and the blood pressure measurement module detect and provide the detection data information for the wearer anytime and in real-time to provide health-related information to the wearer. Furthermore, the smart cloth may include a gas detection module, allowing the wearer to obtain gas data information anytime and anywhere for alerting and notifying the wearer.

Smart cloth

A fluid pump module includes a heat dissipation board assembly, a fixing frame body, fluid pumps, a control board and a conveying pipe is provided. The fixing frame body is fixed at one side of the heat dissipation board assembly, so as to form two accommodating spaces between the heat dissipation board assembly and the fixing frame body. Two fluid pumps are respectively disposed in the two accommodating spaces. The control board is disposed at another side of the heat dissipation board assembly. The conveying pipe connects the two fluid pumps in series so as to form a series connection therebetween. The control board controls operations of the fluid pumps, and the heat dissipation board assembly dissipates heats produced by a module formed by the two fluid pumps.

Fluid pump module

Growing community of inventors

Hsinchu, Taiwan

Chi-Feng Huang