National Yang Ming Chiao Tung University

Chi Feng Hsieh

Yi Chang

Yuen Yee Wong

A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.

Growing community of inventors

Taipei, Taiwan

Chi Feng Hsieh