Infineon Technologies Ag

Chi Dong Nguyen

Till Schlösser

Andreas Rupp

A field effect transistor, FET, is proposed. The FET includes a source region of a first conductivity type that is electrically connected to a source electrode at a first surface of a semiconductor body. The FET further includes a drain region of the first conductivity type that is electrically connected to a drain electrode at the first surface. A dielectric structure is arranged between the source region and the drain region along a first lateral direction. The dielectric structure includes a gate dielectric on the first surface and a field dielectric structure having a bottom side below the first surface. The FET further includes a gate electrode on the gate dielectric. The gate electrode and the field dielectric structure are spaced from each other along the first lateral direction. The FET further includes a field electrode having a bottom side below a top side of the field dielectric structure.

Field effect transistor having a dielectric structure

A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cmunder the majority of the source region. Additional semiconductor device embodiments and methods of manufacture are described.

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Munich, Germany

Chi Dong Nguyen