Omnivision Technologies, Inc.

Chi-Chih Huang

Wei-Feng Lin

En-Chi Li

Chia-Ying Liu

Wu-Zang Yang

Chia-Jung Liu

Yumei Su

An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.

Dam of image sensor module having sawtooth pattern and inclined surface on its inner wall and method of making same

A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.

Laser marked code pattern for representing tracing number of chip

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.

Semiconductor devices, semiconductor wafers, and methods of manufacturing the same

A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic substrate. An image sensor processor is also placed in the cavity in the ceramic substrate, and the image sensor and the image sensor processor are wire bonded to electrical contacts. Glue is deposited on the ceramic substrate, and a glass layer is placed on the glue to adhere the glass layer to the ceramic substrate. The image sensor processor and the image sensor are disposed in the cavity between the glass layer and the ceramic substrate.

System-in-package image sensor

A panel carrier includes a substrate, a die-attach region, a short sidewall, and a conductor. The die-attach region is on a top substrate surface of the substrate for supporting the LCoS panel. The short sidewall is on a first side of the die-attach region and has a top sidewall surface at a first height above the top substrate surface exceeding 0.4 millimeters and an aperture spanning the top sidewall surface and the top substrate surface. The conductor at least partially fills the aperture for electrically connecting to the conductive layer. A method for mechanically and electrically connecting a LCoS panel to a panel carrier having a short sidewall includes electrically connecting a transparent conductive layer of the LCoS panel to a conductive material, within the short sidewall, with a conductive adhesive having a thickness, between the transparent conductive layer and the short sidewall, less than two-hundred micrometers.

Panel carrier and method for attaching a liquid-crystal-on-silicon panel thereto

A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.

Trenched device wafer, stepped-sidewall device die, and associated method

An image sensor package includes a ceramic substrate with a cavity disposed in the ceramic substrate. A glass layer is adhered to the ceramic substrate and encloses the cavity in the ceramic substrate. An image sensor is disposed in the cavity between the glass layer and the ceramic substrate to electrically isolate the image sensor. An image sensor processor is disposed in the cavity and electrically coupled to the image sensor to receive image data from the image sensor.

An image sensor package with a folded cover-glass sealing interface includes (a) an image sensor with a light-receiving surface, (b) a substrate having (i) a recessed surface to which the image sensor is bonded, (ii) a second surface facing in a direction parallel to optical axis of the image sensor, surrounding the recessed surface, and being further than the light-receiving surface from the recessed surface, and (iii) a third surface facing the optical axis, and adjoining and surrounding the second surface, and (c) a cover glass bonded to the substrate with a folded sealing-interface at the second surface and the third surface.

Image sensor packages with folded cover-glass sealing interface

A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface, a pixel array located along the concave light-receiving surface, and a planar external surface facing away from the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.

Curved image sensor systems

A method for manufacturing one or more curved image sensor systems includes (a) at elevated pressure relative to atmospheric pressure, bonding a light-transmitting substrate to an image sensor wafer having at least one pixel array, to form a composite wafer with a respective hermetically sealed cavity between the light-transmitting substrate and each pixel array, and (b) thinning the image sensor wafer of the composite wafer to induce deformation of the image sensor wafer to form a concavely curved pixel array from each pixel array. A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface and a pixel array located along the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.

Growing community of inventors

Hsinchu, Taiwan

Chi-Chih Huang