Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Chi-Chih Chen

Ruey-Hsin Liu

Hsueh-Liang Chou

Chih-Wen Yao

Jun Cai

Chun-Wai Ng

Yogendra Yadav

Tai-Lai Tung

Yi-Cheng Chen

Chin-Lung Lin

You-Tsai Jeng

Chia-Hao Chang

Kuo-Ming Wu

Kai-Wen Cheng

Ko-Yin Lai

Yi-Chun Lin

Szu-Hsiang Lai

Keng-Lon Lei

Te-Chuan Wang

Kai-Wen Yeh

Kuo-Chang Cheng

Jian-Hsing Lee

Puo-Yu Chiang

Hsiao Chin Tuan

Kun-Hsuan Tien

Robert S J Pan

Yu-Sung Chang

Chih-Wei Chou

A clock control method for a High Definition Multimedia Interface (HDMI) receiver operating in a power-saving mode in a sink device is provided. The HDMI receiver has a first module, a second module, and a third module. The clock control method includes the following stages. A clock signal is enabled to be sent to the first module and the third module during a first region of received data. The clock signal is disabled to be sent to the second module during the first region of the received data. The clock signal is enabled to be sent to the third module and the clock signal is disabled to be sent to the first module and the second module during a second region of the received data.

Clock control method and electronic device thereof

A power-saving method for an HDMI device is provided. The method includes detecting color depth information of video data from an HDMI source which is connected to the HDMI port, deriving a horizontal length for each line by fragment of a picture frame according to the color depth information, generating a plurality of synchronization signals according to the horizontal length for each line by fragment, and powering on the HDMI port, according to the synchronization signals, for a predetermined time period to obtain encrypted information from the HDMI source, and powering off the HDMI port after the predetermined time period.

HDMI device and power-saving method for immediately switching HDMI ports

A power-saving method for switching High Definition Multimedia Interface (HDMI) ports on a sink device is provided. The sink device has a first HDMI port initially being enabled for displaying and a second HDMI port being disabled for displaying. The power-saving method includes the steps of using the reference signals to locate the VSYNC active edge in each frame generated by a source device connected to the second HDMI port; turning on the power to the second HDMI port during a power-on region corresponding to the VSYNC active edge in each frame and turning off power otherwise; obtaining information related to a high bandwidth digital content protection (HDCP) in the power-on region; and displaying video data from the source device based on the HDCP information when enabling the second HDMI port connected to the source device.

A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Power MOSFETs structure

An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.

Lateral DMOS device with dummy gate

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Power MOSFETs and methods for manufacturing the same

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.

Quasi-vertical power MOSFET and methods of forming the same

An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.

A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.

High voltage devices, systems, and methods for forming the high voltage devices

An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.

High voltage semiconductor devices and methods for fabricating the same

A semiconductor device includes a first doped region disposed on a first well in a semiconductor substrate; a second doped region disposed on a second well adjacent to the first well in the semiconductor substrate, the second doped region having a dopant density higher than that of the second well; and a gate structure overlying parts of the first and second wells for controlling a current flowing between the first and second doped regions. A first spacing distance from an interface between the second doped region and the second well to its closest edge of the gate structure is greater than 200 percent of a second spacing distance from a center point of second doped region to the edge of the gate structure, thereby increasing impedance against an electrostatic discharge (ESD) current flowing between the first and second doped regions during an ESD event.

Growing community of inventors

Hsinchu, Taiwan

Chi-Chih Chen