Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi Cheh Yeh

Clement Hsingjen Wann

Jeff J Xu

Chi-Sheng Chang

A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.

Growing community of inventors

Taipei, Taiwan

Chi Cheh Yeh