United Solar Systems Corporation

Energy Conversion Devices, Inc.

United Solar Ovonic Corp.

Chi C Yang

Subhendu Guha

Prem Nath

Arindam Banerjee

Stanford R Ovshinsky

Stephen J Hudgens

Annette G Johncock

James Kulman

Ralph Mohr

Jeffrey Fournier

XiXiang Xu

Kevin R Hoffman

Troy Glatfelter

Arun Madan

Kevin Beernink

Ginger Pietka

Kenneth Lord

David Adler

Shengzhong Liu

Xi Xiang Xu

Baojie Yan

Chaolan Hu

A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.

Method and apparatus for the laser scribing of ultra lightweight semiconductor devices

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Method for depositing high-quality microcrystalline semiconductor materials

A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.

Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates

Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

Method for depositing layers of high quality semiconductor material

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

High efficiency photovoltaic device

An optically enhanced back reflector for a photovoltaic device includes a back reflector layer of aluminum having a multi-layered, reflectivity enhancement member deposed thereon. The multi-layer enhancement member includes at least one pair of first and second layers, the first layer having a low index of refraction and the second layer having a high index of refraction. A layer of transmissive conductive oxide is disposed between the optically enhanced back reflector and the photovoltaic device.

Optically enhanced photovoltaic back reflector

Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.

Microwave energized deposition process with substrate temperature

High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

Microwave energized process for the preparation of high quality

The thicknesses of the intrinsic layers of the cells comprising a tandem photovoltaic device are selected so that the cell having the highest quality semiconductor material produces the lowest photocurrent. That cell will then be the dominant cell in the tandem device and its material properties will contribute disproportionately to the overall properties of the tandem device.

Method for the manufacture of improved efficiency tandem photovoltaic

A back reflector for a photovoltaic device includes an electrically conductive, textured layer and a reflective layer conformally disposed on the textured layer. The reflector may include a protective layer atop the reflective layer. The materials of the reflector are selected to be non-reactive under conditions encountered in the manufacture and use of the photovoltaic device.

Composite back reflector for photovoltaic device

A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.

Method of making pin junction semiconductor device with RF deposited

The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.

Microwave energized deposition process wherein the deposition is carried

A protective layer is disposed between a silver reflective electrode and a layer of transparent conductive oxide in a photovoltaic device so as to prevent oxidation of the silver. The protective layer may be continuous or discontinuous and may be fabricated from MgF.sub.2, Si.sub.x N.sub.y or T.sub.ix N.sub.y where x and y are positive numbers.

Protective layer for the back reflector of a photovoltaic device

Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer is being deposited.

Semiconductor device and microwave process for its manufacture

An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Growing community of inventors

Troy, MI, United States of America

Chi C Yang