Winbond Electronics Corporation

Chi-An Wang

Wei-Che Chang

Kai Jen

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate having a capacitor region and a periphery region and a capacitor. A transistor is disposed in the substrate in the capacitor region, and a conductive device is disposed in the substrate in the periphery region. The capacitor is disposed on the substrate in the capacitor region and electrically connected to the transistor, wherein an upper electrode layer of the capacitor does not extend into the periphery region.

Semiconductor structure

Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method includes the following steps. A substrate having a capacitor region and a periphery region is provided, wherein a transistor is formed in the substrate in the capacitor region, and a conductive device is formed in the substrate in the periphery region. A capacitor is formed on the substrate in the capacitance region, wherein the capacitor is electrically connected to the transistor, and an upper electrode layer of the capacitor extends onto the substrate in the periphery region. A protective layer is formed on the upper electrode layer. A doped layer is formed in at least the surface of the protective layer in the capacitor region. An etching process is performed using the doped layer as a mask to remove the protective layer and the upper electrode layer in the periphery region.

Growing community of inventors

Taichung, Taiwan

Chi-An Wang