Intel Corporation

Cheyun Lin

Abhishek A Sharma

Manish Chandhok

Scott Bruce Clendenning

Roman Caudillo

Sudipto Naskar

Embodiments herein describe techniques for a semiconductor device including a three dimensional capacitor. The three dimensional capacitor includes a pole, and one or more capacitor units stacked around the pole. A capacitor unit of the one or more capacitor units includes a first electrode surrounding and coupled to the pole, a dielectric layer surrounding the first electrode, and a second electrode surrounding the dielectric layer. Other embodiments may be described and/or claimed.

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Portland, OR, United States of America

Cheyun Lin