Intel Corporation

Chetan Prasad

Walid M Hafez

Chia-Hong Jan

Zhanping Chen

Anisur Rahman

Sangwoo Pae

Jie-Feng Lin

A programmable anti-fuse element includes a substrate (), an N-well () in the substrate, an electrically insulating layer () over the N-well, and a gate electrode () over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element () includes a metal gate fuse () and an oxide anti-fuse () such as the programmable anti-fuse element just described.

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Hillsboro, OR, United States of America

Chetan Prasad