Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Chetan Agrawal

Dinesh Kumar Agarwal

Amit Kumar Sharma

Vijay Sivasankaran

Sourabh Sankule

Vimal Kumar Jain

Kaushik Kumar Bar

Aspects of a storage device including a memory and a controller are provided. The memory includes non-volatile memory and volatile memory. The controller may determine whether first data is available at a system-level memory location during a first programming stage of a two-stage programming sequence. The controller may read the first data from the system-level memory location when the page data is available at the system-level memory location. Alternatively, the controller may read the first data from the non-volatile memory when the page data is not available at the system-level memory location. Thus, the controller may perform a first programming operation associated with the first programming stage using the first data, thereby improving memory programming performance of the storage device.

User controlled data-in for lower and middle page in MLC-fine QLC memories

A storage system and method for a hybrid quad-level cell (QLC) write scheme for reduced random access memory (RAM) footprint and better performance are provided. In one example, a storage system includes a volatile memory and a non-volatile memory. A Foggy program operation is performed in a QLC memory in the non-volatile memory by writing two pages of data into the QLC memory. Then, a Fine program operation is performed in the QLC memory by reading the two pages of data written to the QLC memory in the Foggy program operation, reading two other pages of data from the volatile memory, and writing the two pages of data read from the QLC memory and the two other pages of data read from the volatile memory in the QLC memory.

Storage system and method for a hybrid quad-level cell (QLC) write scheme for reduced random access memory (RAM) footprint

Apparatus and method for performing wear leveling are disclosed. An ordered list of references to each of a set of memory blocks is stored. A set of memory blocks in the ordered list is sequentially allocating. The allocated set of memory blocks in the ordered list are erased in the sequence in which they were allocated.

Method and apparatus for wear-levelling non-volatile memory

Method and apparatus for wear-leveling non-volatile memory

A memory system logs failures to optimize garbage collection in partial bad blocks that are reused in non-volatile memory. A failure in a primary block may be logged in an inverse global address table. A garbage collection operation can reference the log in order to automatically avoid the failure in the primary block when the primary block is picked as the source block for garbage collection. Likewise, the garbage collection operation may scan only the logged wordlines in the secondary block when the secondary block is picked as the source block for garbage collection.

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Madhya Pradesh, India

Chetan Agrawal