International Business Machines Corporation

Cheryl Faltermeier

Anthony K Stamper

Cyprian Emeka Uzoh

Daniel C Edelstein

Arne Watson Ballantine

Andrew Herbert Simon

Rajarao Jammy

Edward Crandal Cooney, Iii

Stephen Edward Greco

Kwong Hon Wong

Nancy Anne Greco

Uwe Paul Schroeder

Ronald A Warren

Peter Stevens Locke

Ronald Dean Goldblatt

Jeffrey D Gilbert

Glenn Robert Miller

George A Dunbar, Iii

Frank V Liucci

David H Yao

Bruce A Root

A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.

Method to build multi level structure

Process for forming highly conformal titanium nitride on a silicon substrate. A gaseous reaction mixture of titanium tetrachloride and ammonia is passed over the semiconductor substrate surface maintained at a temperature of about 350&deg; C. to about 800&deg; C. The ratio of titanium tetrachloride to ammonia is about 5:1 to 20:1. The high degree of conformality achieved by the process of the invention allows TiN layers to be deposited on structures with high aspect ratios and on complicated, three-dimensional structures without forming a large seam or void.

Highly conformal titanium nitride deposition process for high aspect ratio structures

A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.

Method of annealing copper metallurgy

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LaGrange, NY, United States of America

Cheryl Faltermeier