Applied Materials, Inc.

Cheryl A Knepfler

Srinivas Gandikota

Michael Xiaoxuan Yang

Hua Chung

Ming Xi

Michael Santiago Cox

Jeong Soo Byun

Ken Kaung Lai

Amit Khandelwal

Hongbin Fang

Ravi Rajagopalan

Madhu Moorthy

Ping Jian

Joseph Castro

Chao-Ming Huang

Avgerinos V Gelatos

Averginos V Gelatos

Embodiments described herein relate to an apparatus and method for securing and transferring substrates. A substrate carrier, having one or more electrostatic chucking electrodes disposed therein, electrostatically couples a substrate to the carrier. Optionally, a mask may also be electrostatically coupled to the carrier and may be disposed over a region of the carrier not occupied by the substrate. In one embodiment, multiple electrode assemblies are provided such that a first electrode assembly chucks the substrate to the carrier and a second electrode assembly chucks the mask to the carrier. In another embodiment, a pocket is formed in the carrier and an electrode assembly provides chucking capability within the pocket.

Wafer carrier for smaller wafers and wafer pieces

Embodiments described herein relate to an apparatus and method for securing and transferring substrates. A substrate carrier, having one or more electrostatic chucking electrodes disposed therein, electrostatically couples a substrate to the carrier such. Optionally, a mask may also be electrostatically coupled to the carrier and may be disposed over a region of the carrier not occupied by the substrate. In one embodiment, multiple electrode assemblies are provided such that a first electrode assembly chucks the substrate to the carrier and a second electrode assembly chucks the mask to the carrier. In another embodiment, a pocket is formed in the carrier and an electrode assembly provides chucking capability within the pocket.

In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Methods for depositing tungsten layers employing atomic layer deposition techniques

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Santa Clara, CA, United States of America

Cheryl A Knepfler