International Business Machines Corporation

University of Pennsylvania

Samsung Electronics Co., Ltd.

Universal Display Corporation

Korea Institute of Geoscience and Mineral Resources

Cherie Renee Kagan

Ali Afzali-Ardakani

Christopher Bruce Murray

Laura Louise Kosbar

Rudolf M Tromp

Chun Lin

Ji-Hyuk Choi

Aaron Thomas Fafarman

Soong Ju Oh

David K Kim

Yuming Lai

Sangameshwar Rao Saudari

Eun Joo Jang

Tae Gon Kim

Christos Dimitrios Dimitrakopoulos

George Stojan Tulevski

Tricia Lynn Breen

Sung-hoon Hong

Weon-Kyu Koh

Nuri Oh

Tianshuo Zhao

Supratik Guha

David Brian Mitzi

Robert L Sandstrom

Sally Ann Swanson

Emanuel Tutuc

Dmitri V Talapin

Charan Srinivasan

Steven J Holmes

Tak H Ning

Paul Michael Solomon

Julia J Brown

Nicholas John Thompson

Jane M Shaw

Christopher J Murray

James Bowler Hannon

Ioannis Kymissis

David P Vallett

Leendert M Huisman

Brian Litt

Richard Martel

Leah M Pastel

Paul William Pastel

Kevin T Turner

Jonathan Viventi

Tricia Breen Carmichael

Yijie Jiang

Xingchen Ye

Konstantinos Chondroudis

Jerome L Cann

James R Salimeno, Iii

Angang Dong

Ali Afazali-Ardakani

Wenxiang Chen

Han Wang

A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:

Quantum dots and production method thereof

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Electronic device and production method thereof

Provided are structurally-reconfigurable, optical metasurfaces constructed by, for example, integrating a plasmonic lattice array in the gap between a pair of microbodies that serve to locally amplify the strain created on an elastomeric substrate by an external mechanical stimulus. The spatial arrangement and therefore the optical response of the plasmonic lattice array is reversible.

Ultra-sensitive, mechanically-responsive optical metasurfaces via strain amplification

A method for engineering a line shape of emission spectrum of an organic emissive material in an electroluminescent device is disclosed in which a layer of plasmonic metallic nanostructures having a localized surface plasmonic resonance (LSPR) is provided in proximity to the emissive layer and the layer of plasmonic metallic nanostructures is greater than 2 nm but less than 100 nm from the emissive layer and the LSPR of the plasmonic metallic nanostructures matches the emission wavelength of the organic emissive material. An electroluminescent device incorporating the plasmonic metallic nanostructures is also disclosed.

Spectral emission modification using localized surface plasmon of metallic nanoparticles

Colloidal nanocrystal electronic devices including multiple types of nanocrystal device elements including nanocrystal metallic electrodes, nanocrystal insulators, and nanocrystal insulators. Colloidal nanocrystal electronic devices may be produced by forming multiple nanocrystal electronic device elements on a substrate.

Electronic colloidal nanocrystal devices

Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.

Methods for the preparation of colloidal nanocrystal dispersion

Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

Methods of forming colloidal nanocrystal-based thin film devices

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Nanocrystal thin film fabrication methods and apparatus

A first device comprising a first organic light emitting device (OLED) is described. The first OLED includes an anode, a cathode and an emissive layer disposed between the anode and the cathode. The emissive layer includes a phosphorescent emissive dopant and a host material, that includes nanocrystals. The phosphorescent emissive dopant is bonded to the host material by a bridge moiety.

Organice electroluminescent materials and devices

Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Methods for preparing colloidal nanocrystal-based thin films

A sensor-effector system includes an array of sensor-effector transducers providing a plurality of sensed signals and applying a plurality of effector signals. The array provides signals to input signal conditioning circuitry which digitizes and filters the plurality of sensed signals. A processor receives the digitized signals, and processes them to generate multiple feature vectors. It also analyzes the feature vectors to identify patterns and classify the identified patterns and generates at least one response vector resulting from the recognized pattern. The response vector is applied to output signal conditioning circuitry, coupled which converts the response vector to at least one analog signal which is applied as an effector signal to the array of sensor-effector transducers.

Self-adaptive bio-signal and modulation device

Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.

Organic semiconductors capable of ambipolar transport

A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.

Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure

A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite

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Ossining, NY, United States of America

Cherie Renee Kagan