Dongbu Hitek Co., Ltd.

Dongbu Electronics, Co. Ltd.

Dongbu Hitekco., Ltd.

Cheon Man Shim

Kyung Min Park

Han Choon Lee

An image sensor and fabricating method thereof are provided. The image sensor can include a color filter on a semiconductor substrate, a microlens on the color filter layer, and a carbon-doped low temperature oxide layer on the microlens.

Image sensor and fabricating method thereof

A method of forming a device isolation film for a semiconductor device comprising forming a trench on a silicon semiconductor substrate, rounding an upper corner of the trench using an in-situ plasma method, filling the trench by forming an insulating layer over the silicon semiconductor substrate, and forming a shallow trench isolation area by performing a planarization process on the insulating layer so as to expose the silicon semiconductor substrate.

Method of forming a device isolation film of a semiconductor device

A flash memory device may include a first insulating layer on a base insulating layer on a substrate, a lower wire layer that fills a trench in the first insulating layer, a first insulating interlayer and a second insulating layer stacked in sequence on the first insulating layer and the lower wire layer, a middle wire layer that fills a trench in the second insulating layer, and a second insulating interlayer and an upper wire layer stacked in sequence on the middle wire layer, wherein the lower wire layer. The middle wire layer and the upper wire layer may be electrically connected to each other and the first insulating layer may include a low-k layer in contact with the base insulating layer. In addition, each of the first insulating interlayer, the second insulating layer, and the second insulating interlayer may include an FSG layer.

Flash memory device and fabricating method thereof

An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.

Image sensor and method for manufacturing the same

An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.

A method for forming a metal line of a semiconductor device uses a low dielectric constant material as an interlayer dielectric layer and treats a surface of the interlayer dielectric layer with plasma to prevent moisture and ammonia from being adsorbed in the low dielectric constant material. The method for forming a metal line of a semiconductor device includes forming a lower metal line layer on a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on an entire surface including the lower metal line layer, forming a plasma layer by treating a surface of the interlayer dielectric layer with plasma, forming a photoresist pattern on the plasma layer, forming a via hole using the photoresist pattern as a mask to open the lower metal line layer, and forming a via contact by burying a metal material in the via hole.

Method for forming metal line of semiconductor device

Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.

Method for fabricating Al metal line

A semiconductor device and method of manufacturing same, capable of preventing the material of a barrier metal layer from penetrating into an intermetallic insulating layer are provided. In an embodiment, the device can include: a first metal interconnection formed in a lower insulating layer on a semiconductor substrate; an intermetallic insulating layer formed on the lower insulating layer including the first metal interconnection, the intermetallic insulating layer having a via hole and a trench for a second metal interconnection connecting to the first metal interconnection; a carbon implantation layer formed on inner walls of the via hole and the trench of the intermetallic insulating layer; a barrier metal layer deposited on the first metal interconnection exposed through the via hole and on the carbon implantation layer; a via formed in the via hole; and the second metal interconnection formed in the trench.

Growing community of inventors

Seoul, South Korea

Cheon Man Shim