Samsung Electronics Co., Ltd.

Cheon-bae Kim

Sung-jin Kim

Jung-Hoon Han

Chang-hyun Cho

Gyo-young Jin

Yong-chul Oh

Kyu-pil Lee

Won-chul Lee

Jong-ryul Jun

Kuk-han Yoon

Byung-hoon Cho

A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.

Semiconductor device having capacitors

A semiconductor device includes a semiconductor structure having a first wire extending in a first direction, an intermetallic insulating layer covering the semiconductor structure, a via structure penetrating the intermetallic insulating layer, and a second wire extending on the intermetallic insulating layer in a second direction at a predetermined angle with respect to the first direction, the second wire being connected to the first wire through the via structure and including first and second portions on each other, and a protruding portion protruding from at least one of the first and second portions, the protruding portion being at a boundary of the first and second portions.

Semiconductor device with a multilayer wire

Growing community of inventors

Gyeonggi-do, South Korea

Cheon-bae Kim