Samsung Electronics Co., Ltd.

Cheolyong Choi

Chulwon Lee

A nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory planes each including memory blocks each of which includes memory cells. The control circuit controls an operation of the memory cell array in units of super blocks. The super blocks include memory blocks included in different memory planes. A first memory block is included in a first super block and a first memory plane, and stores first sensitive data required while operating the nonvolatile memory device. A second memory block is included in the first super block and a second memory plane, and stores replicated data of the first sensitive data. A third memory block is included in the first super block and a third memory plane, and stores second sensitive data required while operating the nonvolatile memory device is operating and obtained during a first manufacturing process.

Growing community of inventors

Suwon-si, South Korea

Cheolyong Choi