Rensselaer Polytechnic Institute

Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Cheolsoo Sone

Martin F Schubert

Jong Kyu Kim

Min-Ho Kim

E Fred Schubert

Sukho Yoon

Yongjo Park

Sameer Chhajed

Ahmed Noemaun

Yongio Park

F Fred Schubert

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than &#x2154; of an absolute value of a net polarization mismatch between AlGN(0&#x3c;x&#x3c;1) having bandgap energy equal to that of the material and a composition different thereto and the adjacent quantum barrier layer.

Nitride semiconductor light emitting device

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.

Encapsulant shapes for light emitting devices lacking rotational symmetry designed to enhance extraction of light with a particular linear polarization

Growing community of inventors

Gyunggi-do, South Korea

Cheolsoo Sone